Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo de diodo | Tecnología | Voltaje: pico inverso (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Corriente: fuga inversa a Vr | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MB6S-E3/80BRIDGE RECT 1P 600V 0.5A TO269AA Vishay General Semiconductor - Diodes Division |
106,119 |
|
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- | TO-269AA, 4-BESOP | Tape & Reel (TR) | Active | Single Phase | Standard | 600 V | 500 mA | 1 V @ 400 mA | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-269AA (MBS) |
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W04G-E4/51BRIDGE RECT 1PHASE 400V 1.5A WOG Vishay General Semiconductor - Diodes Division |
4,143 |
|
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- | 4-Circular, WOG | Bulk | Active | Single Phase | Standard | 400 V | 1.5 A | 1 V @ 1 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | WOG |
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W06G-E4/51BRIDGE RECT 1PHASE 600V 1.5A WOG Vishay General Semiconductor - Diodes Division |
2,710 |
|
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- | 4-Circular, WOG | Bulk | Active | Single Phase | Standard | 600 V | 1.5 A | 1 V @ 1 A | 5 µA @ 600 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | WOG |
|
GSIB2560-E3/45BRIDGE RECT 1P 600V 3.5A GSIB-5S Vishay General Semiconductor - Diodes Division |
1,122 |
|
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- | 4-SIP, GSIB-5S | Tube | Active | Single Phase | Standard | 600 V | 3.5 A | 1 V @ 12.5 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GSIB-5S |
|
GBPC3510-E4/51BRIDGE RECT 1PHASE 1KV 35A GBPC Vishay General Semiconductor - Diodes Division |
5,889 |
|
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- | 4-Square, GBPC | Box | Active | Single Phase | Standard | 1 kV | 35 A | 1.1 V @ 17.5 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | - | - | QC Terminal | GBPC |
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KBL06-E4/51BRIDGE RECT 1PHASE 600V 4A KBL Vishay General Semiconductor - Diodes Division |
7,554 |
|
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- | 4-SIP, KBL | Bulk | Active | Single Phase | Standard | 600 V | 4 A | 1.1 V @ 4 A | 5 µA @ 600 V | -50°C ~ 150°C (TJ) | - | - | Through Hole | KBL |
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KBL02-E4/51BRIDGE RECT 1PHASE 200V 4A KBL Vishay General Semiconductor - Diodes Division |
832 |
|
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- | 4-SIP, KBL | Bulk | Active | Single Phase | Standard | 200 V | 4 A | 1.1 V @ 4 A | 5 µA @ 200 V | -50°C ~ 150°C (TJ) | - | - | Through Hole | KBL |
|
PB4010-E3/45BRIDGE RECT 1PHASE 1KV 40A PB Vishay General Semiconductor - Diodes Division |
1,478 |
|
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isoCink+™ | 4-SIP, PB | Tube | Active | Single Phase | Standard | 1 kV | 40 A | 1.1 V @ 20 A | 10 µA @ 1000 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | isoCINK+™ PB |
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GBPC2510-E4/51BRIDGE RECT 1PHASE 1KV 25A GBPC Vishay General Semiconductor - Diodes Division |
2,964 |
|
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- | 4-Square, GBPC | Box | Active | Single Phase | Standard | 1 kV | 25 A | 1.1 V @ 12.5 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | - | - | QC Terminal | GBPC |
|
LVB2560-M3/45BRIDGE RECT 1P 600V 25A GSIB-5S Vishay General Semiconductor - Diodes Division |
918 |
|
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- | 4-SIP, GSIB-5S | Tube | Active | Single Phase | Standard | 600 V | 25 A | 920 mV @ 12.5 A | 10 µA @ 600 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GSIB-5S |