Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Configuración | Característica FET | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Capacitancia de entrada (Ciss) (máx.) a Vds | Potencia: máx. | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
BSZ0907NDXTMA2MOSFET 2N-CH 30V 6.7A WISON-8 Infineon Technologies |
0 |
|
![]() Tabla de datos |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate, 4.5V Drive | 30V | 6.7A (Ta), 8.5A (Ta) | 9.5mOhm @ 9A, 10V, 7.2mOhm @ 9A, 10V | 2V @ 250µA | 6.4nC @ 4.5V, 7.9nC @ 4.5V | 730pF @ 15V, 900pF @ 15V | 700mW (Ta), 860mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-WISON-8 |
![]() |
BSZ0908NDXTMA2MOSFET 2N-CH 30V 4.8A WISON-8 Infineon Technologies |
0 |
|
- |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate, 4.5V Drive | 30V | 4.8A (Ta), 7.6A (Ta) | 18mOhm @ 9A, 10V, 9mOhm @ 9A, 10V | 2V @ 250µA | 3nC @ 4.5V, 6.4nC @ 4.5V | 340pF @ 15V, 730pF @ 15V | 700mW (Ta), 860mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-WISON-8 |
![]() |
FF1MR12KM1HPMOSFET Infineon Technologies |
0 |
|
- |
- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
IRF8910TRPBF-1MOSFET 2N-CH 20V 10A 8SO Infineon Technologies |
0 |
|
- |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 20V | 10A (Ta) | 13.4mOhm @ 10A, 10V | 2.55V @ 250µA | 11nC @ 4.5V | 960pF @ 10V | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
![]() |
IPG20N06S2L65AAUMA1MOSFET 2N-CH 55V 20A 8TDSON Infineon Technologies |
0 |
|
- |
OptiMOS™ | 8-PowerVDFN | Bulk | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 55V | 20A (Tc) | 65mOhm @ 15A, 10V | 2V @ 14µA | 12nC @ 10V | 410pF @ 25V | 43W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount, Wettable Flank | PG-TDSON-8-10 |
![]() |
IPG20N06S2L65AUMA1MOSFET Infineon Technologies |
0 |
|
- |
- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |