Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Configuración | Característica FET | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Capacitancia de entrada (Ciss) (máx.) a Vds | Potencia: máx. | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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APTC90TAM60TPGMOSFET 6N-CH 900V 59A SP6-P Microsemi Corporation |
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CoolMOS™ | SP6 | Tray | Obsolete | MOSFET (Metal Oxide) | 6 N-Channel (3-Phase Bridge) | - | 900V | 59A | 60mOhm @ 52A, 10V | 3.5V @ 6mA | 540nC @ 10V | 13600pF @ 100V | 462W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6-P |
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JAN2N7334MOSFET 4N-CH 100V 1A MO-036AB Microsemi Corporation |
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- | 14-DIP (0.300", 7.62mm) | Bulk | Active | MOSFET (Metal Oxide) | 4 N-Channel | - | 100V | 1A | 700mOhm @ 600mA, 10V | 4V @ 250µA | 60nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | Military | MIL-PRF-19500/597 | Through Hole | MO-036AB |
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JAN2N7335MOSFET 4P-CH 100V 0.75A Microsemi Corporation |
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- | 14-DIP (0.300", 7.62mm) | Bulk | Obsolete | MOSFET (Metal Oxide) | 4 P-Channel | - | 100V | 750mA | 1.4Ohm @ 500mA, 10V | 4V @ 250µA | - | - | 1.4W | -55°C ~ 150°C (TJ) | Military | MIL-PRF-19500/599 | Through Hole | - |
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JANTX2N7335MOSFET 4P-CH 100V 0.75A MO-036AB Microsemi Corporation |
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- | 14-DIP (0.300", 7.62mm) | Bulk | Obsolete | MOSFET (Metal Oxide) | 4 P-Channel | - | 100V | 750mA | 1.4Ohm @ 500mA, 10V | 4V @ 250µA | - | - | 1.4W | -55°C ~ 150°C (TJ) | Military | MIL-PRF-19500/599 | Through Hole | MO-036AB |
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JANTXV2N7334MOSFET 4N-CH 100V 1A MO-036AB Microsemi Corporation |
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- | 14-DIP (0.300", 7.62mm) | Bulk | Active | MOSFET (Metal Oxide) | 4 N-Channel | - | 100V | 1A | 700mOhm @ 600mA, 10V | 4V @ 250µA | 60nC @ 10V | - | 1.4W | -55°C ~ 150°C (TJ) | Military | MIL-PRF-19500/597 | Through Hole | MO-036AB |
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JANTXV2N7335MOSFET 4P-CH 100V 0.75A MO-036AB Microsemi Corporation |
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- | 14-DIP (0.300", 7.62mm) | Bulk | Obsolete | MOSFET (Metal Oxide) | 4 P-Channel | - | 100V | 750mA | 1.4Ohm @ 500mA, 10V | 4V @ 250µA | - | - | 1.4W | -55°C ~ 150°C (TJ) | Military | MIL-PRF-19500/599 | Through Hole | MO-036AB |
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2N7335MOSFET 4P-CH 100V 0.75A MO-036AB Microsemi Corporation |
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- | 14-DIP (0.300", 7.62mm) | Bulk | Obsolete | MOSFET (Metal Oxide) | 4 P-Channel | - | 100V | 750mA | 1.4Ohm @ 500mA, 10V | 4V @ 250µA | - | - | 1.4W | -55°C ~ 150°C (TJ) | - | - | Through Hole | MO-036AB |
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APTSM120AM08CT6AGMOSFET 2N-CH 1200V 370A SP6 Microsemi Corporation |
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- | SP6 | Bulk | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual), Schottky | - | 1200V (1.2kV) | 370A (Tc) | 10mOhm @ 200A, 20V | 3V @ 10mA | 1360nC @ 20V | - | 2300W | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | SP6 |