制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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AUIRFR4105AUTOMOTIVE HEXFET N CHANNEL International Rectifier |
5,362 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 20A (Tc) | 10V | 45mOhm @ 16A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | DPAK |
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IRF6811STRPBFMOSFET N-CH 25V 19A/74A DIRECTFT International Rectifier |
33,253 | - |
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DirectFET® | DirectFET™ Isometric SQ | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 19A (Ta), 74A (Tc) | - | 3.7mOhm @ 19A, 10V | 2.1V @ 35µA | 17 nC @ 4.5 V | ±16V | 1590 pF @ 13 V | - | 2.1W (Ta), 32W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DirectFET™ Isometric SQ |
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AUIRLR2703MOSFET N-CH 30V 20A DPAK International Rectifier |
4,674 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 20A (Tc) | - | 45mOhm @ 14A, 10V | 1V @ 250µA | 15 nC @ 4.5 V | ±16V | 450 pF @ 25 V | - | 45W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | DPAK |
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AUIRLZ24NSTRLAUTOMOTIVE HEXFET POWER MOSFET International Rectifier |
82,400 | - |
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HEXFET® | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 18A (Tc) | 4V, 10V | 60mOhm @ 11A, 10V | 2V @ 250µA | 15 nC @ 5 V | ±16V | 480 pF @ 25 V | - | 3.8W (Ta), 45W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D2PAK |
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AUIRFZ34NAUTOMOTIVE HEXFET N CHANNEL International Rectifier |
12,129 | - |
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HEXFET® | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 55 V | 29A (Tc) | 10V | 40mOhm @ 16A, 10V | 4V @ 250µA | 34 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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AUIRF9Z34NAUTOMOTIVE HEXFET P CHANNEL International Rectifier |
11,256 | - |
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HEXFET® | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 55 V | 19A (Tc) | 10V | 100mOhm @ 10A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±20V | 620 pF @ 25 V | - | 68W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-220AB |
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IRF6892STRPBF25V 999A DIRECTFET-LV International Rectifier |
3,790 | - |
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HEXFET® | DirectFET™ Isometric S3C | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 28A (Ta), 125A (Tc) | 4.5V, 10V | 1.7mOhm @ 28A, 10V | 2.1V @ 50µA | 25 nC @ 4.5 V | ±16V | 2510 pF @ 13 V | - | 2.1W (Ta), 42W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET™ S3C |
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IRF60B217TRENCH 40<-<100V International Rectifier |
3,490 | - |
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HEXFET® | TO-220-3 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 60 V | 60A (Tc) | 6V, 10V | 9mOhm @ 36A, 10V | 3.7V @ 50µA | 66 nC @ 10 V | ±20V | 2230 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-1 |
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AUIRFR5410-IRAUTOMOTIVE HEXFET P CHANNEL International Rectifier |
1,806 | - |
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HEXFET® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 13A (Tc) | 10V | 205mOhm @ 7.8A, 10V | 4V @ 250µA | 58 nC @ 10 V | ±20V | 760 pF @ 25 V | - | 66W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DPAK |
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IRF6810STRPBFPFET, 16A I(D), 25V, 0.0052OHM, International Rectifier |
4,760 | - |
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HEXFET® | DirectFET™ Isometric S1 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 16A (Ta), 50A (Tc) | 4.5V, 10V | 5.2mOhm @ 16A, 10V | 2.1V @ 25µA | 11 nC @ 4.5 V | ±16V | 1038 pF @ 13 V | - | 2.1W (Ta), 20W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | DIRECTFET S1 |