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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
RSH070N05TB1MOSFET N-CH 45V 7A 8SOP Rohm Semiconductor |
4,973 |
|
Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 45 V | 7A (Ta) | 4V, 10V | 25mOhm @ 7A, 10V | 2.5V @ 1mA | 16.8 nC @ 5 V | ±20V | 1000 pF @ 10 V | - | 2W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
RD3L050SNTL1MOSFET N-CH 60V 5A TO252 Rohm Semiconductor |
1,449 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 5A (Ta) | 4V, 10V | 109mOhm @ 5A, 10V | 3V @ 1mA | 8 nC @ 10 V | ±20V | 290 pF @ 10 V | - | 15W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
RQ7E100ATTCRMOSFET P-CH 30V 10A TSMT8 Rohm Semiconductor |
2,388 |
|
Tabla de datos |
- | 8-SMD, Flat Leads | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 10A (Ta) | 4.5V, 10V | 11.2mOhm @ 10A, 10V | 2.5V @ 1mA | 53 nC @ 10 V | ±20V | 2370 pF @ 15 V | - | 1.1W (Ta) | 150°C (TJ) | - | - | Surface Mount | TSMT8 |
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|
RXH090N03TB14V DRIVE NCH MOSFET: MOSFETS ARE Rohm Semiconductor |
1,520 |
|
Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta) | 4V, 10V | 17mOhm @ 9A, 10V | 2.5V @ 1mA | 6.8 nC @ 5 V | ±20V | 440 pF @ 10 V | - | 2W (Ta) | 150°C | - | - | Surface Mount | 8-SOP |
|
RQ3L090GNTBMOSFET N-CH 60V 9A/30A 8HSMT Rohm Semiconductor |
17,625 |
|
Tabla de datos |
- | 8-PowerVDFN | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 60 V | 9A (Ta), 30A (Tc) | 4.5V, 10V | 13.9mOhm @ 9A, 10V | 2.7V @ 300µA | 24.5 nC @ 10 V | ±20V | 1260 pF @ 30 V | - | 2W (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-HSMT (3.2x3) |
|
|
RD3L080SNFRATLMOSFET N-CH 60V 8A TO252 Rohm Semiconductor |
6,988 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 8A (Ta) | 4V, 10V | 80mOhm @ 8A, 10V | 2.5V @ 1mA | 9.4 nC @ 10 V | ±20V | 380 pF @ 10 V | - | 15W (Tc) | 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252 |
|
RD3G03BATTL1PCH -40V -35A POWER MOSFET - RD3 Rohm Semiconductor |
4,298 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 40 V | 35A (Tc) | 4.5V, 10V | 19.1mOhm @ 35A, 10V | 2.5V @ 1mA | 38 nC @ 10 V | ±20V | 2100 pF @ 20 V | - | 56W (Tc) | 150°C (TJ) | - | - | Surface Mount | TO-252 |
|
|
RRH090P03TB1MOSFET P-CH 30V 9A 8SOP Rohm Semiconductor |
2,184 |
|
Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta) | 4V, 10V | 15.4mOhm @ 9A, 10V | 2.5V @ 1mA | 30 nC @ 5 V | ±20V | 3000 pF @ 10 V | - | 650mW (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
RRH090P03GZETBMOSFET P-CH 30V 9A 8SOP Rohm Semiconductor |
970 |
|
Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Not For New Designs | P-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta) | 4V, 10V | 15.4mOhm @ 9A, 10V | 2.5V @ 1mA | 56 nC @ 10 V | ±20V | 3000 pF @ 10 V | - | 650mW (Ta) | 150°C (TJ) | - | - | Surface Mount | 8-SOP |
|
|
RD3P100SNFRATLMOSFET N-CH 100V 10A TO252 Rohm Semiconductor |
1,851 |
|
Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 10A (Ta) | 4V, 10V | 133mOhm @ 5A, 10V | 2.5V @ 1mA | 18 nC @ 10 V | ±20V | 700 pF @ 25 V | - | 20W (Tc) | 150°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-252 |
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