制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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TPS1100PWMOSFET P-CH 15V 1.27A 8TSSOP Texas Instruments |
508 | - |
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- | 8-TSSOP (0.173", 4.40mm Width) | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 15 V | 1.27A (Ta) | 2.7V, 10V | 180mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45 nC @ 10 V | +2V, -15V | - | - | 504mW (Ta) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 8-TSSOP |
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TPS1100DMOSFET P-CH 15V 1.6A 8SOIC Texas Instruments |
346 | - |
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- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 15 V | 1.6A (Ta) | 2.7V, 10V | 180mOhm @ 1.5A, 10V | 1.5V @ 250µA | 5.45 nC @ 10 V | +2V, -15V | - | - | 791mW (Ta) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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CSD16414Q5MOSFET N-CH 25V 34A/100A 8VSON Texas Instruments |
2,582 | - |
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NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 34A (Ta), 100A (Tc) | 4.5V, 10V | 1.9mOhm @ 30A, 10V | 2V @ 250µA | 21 nC @ 4.5 V | +16V, -12V | 3650 pF @ 12.5 V | - | 3.2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-VSON-CLIP (5x6) |
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TPS1101DMOSFET P-CH 15V 2.3A 8SOIC Texas Instruments |
69 | - |
|
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- | 8-SOIC (0.154", 3.90mm Width) | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 15 V | 2.3A (Ta) | 2.7V, 10V | 90mOhm @ 2.5A, 10V | 1.5V @ 250µA | 11.25 nC @ 10 V | +2V, -15V | - | - | 791mW (Ta) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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CSD18542KTTTMOSFET N-CH 60V 200A/170A DDPAK Texas Instruments |
288 | - |
|
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NexFET™ | TO-263-4, D2PAK (3 Leads + Tab), TO-263AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 170A (Tc) | 4.5V, 10V | 4mOhm @ 100A, 10V | 2.2V @ 250µA | 57 nC @ 10 V | ±20V | 5070 pF @ 30 V | - | 250W (Ta) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263 (DDPAK-3) |
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CSD16401Q5TMOSFET N-CH 25V 100A 8VSON Texas Instruments |
520 | - |
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NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 25 V | 100A (Ta) | 4.5V, 10V | 1.6mOhm @ 40A, 10V | 1.9V @ 250µA | 29 nC @ 4.5 V | +16V, -12V | 4100 pF @ 12.5 V | - | 3.1W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-VSON-CLIP (5x6) |
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CSD17559Q5TMOSFET N-CH 30V 100A 8VSON Texas Instruments |
482 | - |
|
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NexFET™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 100A (Ta) | 4.5V, 10V | 1.15mOhm @ 40A, 10V | 1.7V @ 250µA | 51 nC @ 4.5 V | ±20V | 9200 pF @ 15 V | - | 3.2W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-VSON-CLIP (5x6) |
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CSD13303W1015MOSFET N-CH 12V 31A 6DSBGA Texas Instruments |
2,997 | - |
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NexFET™ | 6-UFBGA, DSBGA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 12 V | 3.5A (Tc) | 2.5V, 4.5V | 20mOhm @ 1.5A, 4.5V | 1.2V @ 250µA | 4.7 nC @ 4.5 V | ±8V | 715 pF @ 6 V | - | 1.65W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-DSBGA (1x1.5) |
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CSD23203WMOSFET P-CH 8V 3A 6DSBGA Texas Instruments |
2,215 | - |
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NexFET™ | 6-UFBGA, DSBGA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 8 V | 3A (Ta) | 1.8V, 4.5V | 19.4mOhm @ 1.5A, 4.5V | 1.1V @ 250µA | 6.3 nC @ 4.5 V | -6V | 914 pF @ 4 V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-DSBGA (1x1.5) |
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CSD25304W1015MOSFET P-CH 20V 3A 6DSBGA Texas Instruments |
2,757 | - |
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NexFET™ | 6-UFBGA, DSBGA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 1.8V, 4.5V | 32.5mOhm @ 1.5A, 4.5V | 1.15V @ 250µA | 4.4 nC @ 4.5 V | ±8V | 595 pF @ 10 V | - | 750mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-DSBGA (1x1.5) |