制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
RFP8P10P-CHANNEL POWER MOSFET Fairchild Semiconductor |
29,973 | - |
|
![]() Tabla de datos |
- | TO-220-3 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 8A (Tc) | 10V | 400mOhm @ 8A, 10V | 4V @ 250µA | - | ±20V | 1500 pF @ 25 V | - | 75W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220AB |
![]() |
SFR9120TMP-CHANNEL POWER MOSFET Fairchild Semiconductor |
27,709 | - |
|
![]() Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 100 V | 4.9A (Tc) | 10V | 600mOhm @ 2.5A, 10V | 4V @ 250µA | 20 nC @ 10 V | ±30V | 550 pF @ 25 V | - | 2.5W (Ta), 32W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
![]() |
FDFMA2P859TMOSFET P-CH 20V 3A MICROFET Fairchild Semiconductor |
14,392 | - |
|
![]() Tabla de datos |
PowerTrench® | 6-UDFN Exposed Pad | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 1.8V, 4.5V | 120mOhm @ 3A, 4.5V | 1.3V @ 250µA | 6 nC @ 4.5 V | ±8V | 435 pF @ 10 V | Schottky Diode (Isolated) | 1.4W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | MicroFET 2x2 Thin |
![]() |
FDFMA2P853TMOSFET P-CH 20V 3A MICROFET Fairchild Semiconductor |
13,740 | - |
|
![]() Tabla de datos |
PowerTrench® | 6-VDFN Exposed Pad | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 3A (Ta) | 1.8V, 4.5V | 120mOhm @ 3A, 4.5V | 1.3V @ 250µA | 6 nC @ 4.5 V | ±8V | 435 pF @ 10 V | Schottky Diode (Isolated) | 1.4W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-MicroFET (2x2) |
![]() |
FDD6780MOSFET N-CH 25V 16.5A/30A DPAK Fairchild Semiconductor |
12,410 | - |
|
![]() Tabla de datos |
PowerTrench® | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 25 V | 16.5A (Ta), 30A (Tc) | 4.5V, 10V | 8.5mOhm @ 16.5A, 10V | 3V @ 250µA | 29 nC @ 10 V | ±20V | 1590 pF @ 13 V | - | 3.7W (Ta), 32.6W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
![]() |
HUF76009D3STMOSFET N-CH 20V 20A TO252AA Fairchild Semiconductor |
11,609 | - |
|
![]() Tabla de datos |
UltraFET™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | N-Channel | MOSFET (Metal Oxide) | 20 V | 20A (Tc) | 5V, 10V | 27mOhm @ 20A, 10V | 3V @ 250µA | 13 nC @ 10 V | ±20V | 470 pF @ 20 V | - | 41W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
![]() |
IRFS830BN-CHANNEL POWER MOSFET Fairchild Semiconductor |
11,242 | - |
|
![]() Tabla de datos |
- | TO-220-3 Full Pack | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 4.5A (Tj) | 10V | 1.5Ohm @ 2.25A, 10V | 4V @ 250µA | 35 nC @ 10 V | ±30V | 1050 pF @ 25 V | - | 38W (Tj) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F-3 |
|
FDMB668PMOSFET P-CH 20V 6.1A 8MLP Fairchild Semiconductor |
10,643 | - |
|
![]() Tabla de datos |
PowerTrench® | 8-PowerWDFN | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 20 V | 6.1A (Ta) | 1.8V, 4.5V | 35mOhm @ 6.1A, 4.5V | 1V @ 250µA | 59 nC @ 10 V | ±8V | 2085 pF @ 10 V | - | 1.9W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-MLP, MicroFET (3x1.9) |
![]() |
HUF75617D3MOSFET N-CH 100V 16A IPAK Fairchild Semiconductor |
5,072 | - |
|
![]() Tabla de datos |
UltraFET™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 100 V | 16A (Tc) | 10V | 90mOhm @ 16A, 10V | 4V @ 250µA | 39 nC @ 20 V | ±20V | 570 pF @ 25 V | - | 64W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | IPAK |
![]() |
IRFU430BTUN-CHANNEL POWER MOSFET Fairchild Semiconductor |
5,040 | - |
|
![]() Tabla de datos |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 3.5A (Tc) | 10V | 1.5Ohm @ 1.75A, 10V | 4V @ 250µA | 33 nC @ 10 V | ±30V | 1050 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | IPAK |