制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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DIF120SIC053-AQMOSFET TO-247-4L N 65A 1200V Diotec Semiconductor |
433 | - |
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![]() Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 65A (Tc) | 18V | 53mOhm @ 33A, 18V | 4V @ 9.5mA | 121 nC @ 15 V | - | 2070 pF @ 1000 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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DIW120SIC059-AQMOSFET TO-247-3L N 65A 1200V Diotec Semiconductor |
430 | - |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 65A (Tc) | 18V | 53mOhm @ 33A, 18V | 4V @ 9.5mA | 121 nC @ 15 V | - | 2070 pF @ 1000 V | - | 278W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
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DIW120SIC022-AQSIC MOSFET, TO-247-3L, N, 120A, Diotec Semiconductor |
150 | - |
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![]() Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 120A (Tc) | 18V | 22.3mOhm @ 75A, 18V | 4V @ 23.5mA | 269 nC @ 18 V | +18V, -4V | 4817 pF @ 1000 V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
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DIF120SIC022-AQSIC MOSFET, TO-247-4L, N, 120A, Diotec Semiconductor |
150 | - |
|
![]() Tabla de datos |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 120A (Tc) | 18V | 22.3mOhm @ 75A, 18V | 4V @ 23.5mA | 269 nC @ 18 V | +18V, -4V | 4817 pF @ 1000 V | - | 340W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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DIW120SIC023-AQMOSFET TO-247-3L N 130A 1200V Diotec Semiconductor |
705 | - |
|
![]() Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 125A (Tc) | 18V | 23mOhm @ 75A, 18V | 2.9V @ 250µA | 45 nC @ 18 V | - | 6150 pF @ 1000 V | - | 600W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247 |
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MMFTN3422KMOSFET, SOT-23, 30V, 4.2A, 0, 1. Diotec Semiconductor |
3,000 | - |
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![]() Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.2A (Tj) | 2.5V, 10V | 42mOhm @ 4.2A, 10V | 1.2V @ 250µA | 14.5 nC @ 10 V | ±12V | 387 pF @ 25 V | - | 1.25W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 (TO-236) |
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2N7002PWMOSFET, SOT-323, 60V, 0.315A, 15 Diotec Semiconductor |
796 | - |
|
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- | SC-70, SOT-323 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 315mA (Ta) | 5V, 10V | 1.6Ohm @ 500mA, 10V | 2.4V @ 250µA | 0.6 nC @ 10 V | ±20V | 30 pF @ 10 V | - | 260mW (Ta) | 150°C (TJ) | - | - | Surface Mount | SOT-323 |
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DIT050N06MOSFET TO220AB N 60V 0.014OHM Diotec Semiconductor |
331 | - |
|
![]() Tabla de datos |
- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 20mOhm @ 20A, 10V | 2.5V @ 250µA | 50 nC @ 10 V | ±20V | 2050 pF @ 30 V | - | 85W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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DID3A2N65MOSFET IPAK N 650V 3.2A Diotec Semiconductor |
0 | - |
|
![]() Tabla de datos |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 3.2A (Tc) | 10V | 2.6Ohm @ 2A, 10V | 4V @ 250µA | 25 nC @ 10 V | ±30V | 581 pF @ 25 V | - | 54W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 |
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MMFTN138KMOSFET SOT23 N 60V 1.6OHM 150C Diotec Semiconductor |
0 | - |
|
![]() Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 360mA (Ta) | 2.5V, 10V | 1.6Ohm @ 350mA, 10V | 1.6V @ 250µA | 1.3 nC @ 10 V | ±20V | 51.3 pF @ 10 V | - | 350mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23 (TO-236) |