Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
GB02SLT06-214SIC SCHOTTKY DIODE 650V 2A GeneSiC Semiconductor |
0 |
|
- |
* | - | Tape & Reel (TR) | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
![]() |
GC08MPS12-220DIODE SIL CARB 1.2KV 43A TO220-2 GeneSiC Semiconductor |
0 |
|
![]() Tabla de datos |
SiC Schottky MPS™ | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 43A | 1.8 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 7 µA @ 1200 V | 545pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
![]() |
GB05SLT12-252DIODE SIL CARBIDE 1.2KV 5A TO252 GeneSiC Semiconductor |
0 |
|
![]() Tabla de datos |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Bulk | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 260pF @ 1V, 1MHz | - | - | Surface Mount | TO-252 | -55°C ~ 175°C |
![]() |
GC05MPS12-252DIODE SIL CARB 1.2KV 27A TO252-2 GeneSiC Semiconductor |
0 |
|
![]() Tabla de datos |
SiC Schottky MPS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 27A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 4 µA @ 1200 V | 359pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
![]() |
S6BDIODE GEN PURP 100V 6A DO4 GeneSiC Semiconductor |
0 |
|
![]() Tabla de datos |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 100 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
![]() |
S6BRDIODE GEN PURP REV 100V 6A DO4 GeneSiC Semiconductor |
0 |
|
![]() Tabla de datos |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 100 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
![]() |
S6DDIODE GEN PURP 200V 6A DO4 GeneSiC Semiconductor |
0 |
|
![]() Tabla de datos |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 200 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
![]() |
S6DRDIODE GEN PURP REV 200V 6A DO4 GeneSiC Semiconductor |
0 |
|
![]() Tabla de datos |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 200 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
![]() |
S6GDIODE GEN PURP 400V 6A DO4 GeneSiC Semiconductor |
0 |
|
![]() Tabla de datos |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 400 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |
![]() |
S6GRDIODE GEN PURP REV 400V 6A DO4 GeneSiC Semiconductor |
0 |
|
![]() Tabla de datos |
- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 400 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 100 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 175°C |