Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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S400QDIODE GP 1.2KV 400A DO205AB DO9 GeneSiC Semiconductor |
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- | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 1200 V | 400A | 1.2 V @ 400 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 200°C |
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S400QRDIODE GP REV 1.2KV 400A DO205AB GeneSiC Semiconductor |
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- | DO-205AB, DO-9, Stud | Bulk | Active | Standard, Reverse Polarity | 1200 V | 400A | 1.2 V @ 400 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 200°C |
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S400YDIODE GP 1.6KV 400A DO205AB DO9 GeneSiC Semiconductor |
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- | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 1600 V | 400A | 1.2 V @ 400 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 200°C |
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S400YRDIODE GP REV 1.6KV 400A DO205AB GeneSiC Semiconductor |
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![]() Tabla de datos |
- | DO-205AB, DO-9, Stud | Bulk | Active | Standard, Reverse Polarity | 1600 V | 400A | 1.2 V @ 400 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-205AB (DO-9) | -60°C ~ 200°C |
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1N8030-GADIODE SIL CARB 650V 750MA TO257 GeneSiC Semiconductor |
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- | TO-257-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 750mA | 1.39 V @ 750 mA | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 76pF @ 1V, 1MHz | - | - | Through Hole | TO-257 | -55°C ~ 250°C |
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1N8031-GADIODE SIL CARBIDE 650V 1A TO276 GeneSiC Semiconductor |
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- | TO-276AA | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 1A | 1.5 V @ 1 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 76pF @ 1V, 1MHz | - | - | Through Hole | TO-276 | -55°C ~ 250°C |
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1N8032-GADIODE SIL CARB 650V 2.5A TO257 GeneSiC Semiconductor |
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- | TO-257-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 2.5A | 1.3 V @ 2.5 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 274pF @ 1V, 1MHz | - | - | Through Hole | TO-257 | -55°C ~ 250°C |
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1N8024-GADIODE SIL CARB 1.2KV 750MA TO257 GeneSiC Semiconductor |
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- | TO-257-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 750mA | 1.74 V @ 750 mA | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 66pF @ 1V, 1MHz | - | - | Through Hole | TO-257 | -55°C ~ 250°C |
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1N8033-GADIODE SIL CARB 650V 4.3A TO276 GeneSiC Semiconductor |
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- | TO-276AA | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4.3A | 1.65 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 650 V | 274pF @ 1V, 1MHz | - | - | Surface Mount | TO-276 | -55°C ~ 250°C |
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1N8026-GADIODE SIL CARBIDE 1.2KV 8A TO257 GeneSiC Semiconductor |
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- | TO-257-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 8A | 1.6 V @ 2.5 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 237pF @ 1V, 1MHz | - | - | Through Hole | TO-257 | -55°C ~ 250°C |