Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDH10G65C6XKSA1DIODE SIL CARB 650V 24A TO220-2 Infineon Technologies |
869 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 24A | 1.35 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 33 µA @ 420 V | 495pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
|
IDW75D65D1XKSA1DIODE GEN PURP 650V 150A TO247-3 Infineon Technologies |
2,129 |
|
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- | TO-247-3 | Tube | Active | Standard | 650 V | 150A | 1.7 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 108 ns | 40 µA @ 650 V | - | - | - | Through Hole | PG-TO247-3 | -40°C ~ 175°C |
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IDM10G120C5XTMA1DIODE SIL CARB 1.2KV 38A TO252-2 Infineon Technologies |
4,234 |
|
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CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 38A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 62 µA @ 12 V | 29pF @ 800V, 1MHz | - | - | Surface Mount | PG-TO252-2 | -55°C ~ 150°C |
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IDH10G120C5XKSA1DIODE SIL CARB 1.2KV 10A TO220-1 Infineon Technologies |
1,175 |
|
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CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 62 µA @ 1200 V | 525pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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IDDD16G65C6XTMA1DIODE SIL CARB 650V 43A HDSOP-10 Infineon Technologies |
0 |
|
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CoolSiC™+ | 10-PowerSOP Module | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 43A | - | No Recovery Time > 500mA (Io) | 0 ns | 53 µA @ 420 V | 783pF @ 1V, 1MHz | - | - | Surface Mount | PG-HDSOP-10-1 | -55°C ~ 175°C |
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IDH16G65C6XKSA1DIODE SIL CARB 650V 34A TO220-2 Infineon Technologies |
3,011 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 34A | 1.35 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 53 µA @ 420 V | 783pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
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IDH20G65C6XKSA1DIODE SIL CARB 650V 41A TO220-2 Infineon Technologies |
1,342 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 41A | 1.35 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 67 µA @ 420 V | 970pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2 | -55°C ~ 175°C |
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IDH20G65C5XKSA2DIODE SIL CARB 650V 20A TO220-1 Infineon Technologies |
864 |
|
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CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 210 µA @ 650 V | 590pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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IDW20G65C5XKSA1DIODE SIL CARB 650V 20A TO247-3 Infineon Technologies |
270 |
|
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CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 210 µA @ 650 V | 590pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3-41 | -55°C ~ 175°C |
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IDH20G120C5XKSA1DIODE SIL CARB 1.2KV 56A TO220-1 Infineon Technologies |
974 |
|
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CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 56A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 123 µA @ 1200 V | 1050pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |