Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRD3CH11DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
0 |
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- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRD3CH16DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
0 |
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- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRD3CH24DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
0 |
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- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRD3CH31DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
0 |
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- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRD3CH53DB6DIODE GEN PURP 1.2KV 100A DIE Infineon Technologies |
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- | Die | Bulk | Obsolete | Standard | 1200 V | 100A | 2.7 V @ 100 A | Fast Recovery =< 500ns, > 200mA (Io) | 270 ns | 20 µA @ 1200 V | - | - | - | Surface Mount | Die | -40°C ~ 150°C |
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IRD3CH53DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
0 |
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- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRD3CH5DB6DIODE GEN PURP 1.2KV 5A DIE Infineon Technologies |
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- | Die | Bulk | Obsolete | Standard | 1200 V | 5A | 2.7 V @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | 96 ns | 100 nA @ 1200 V | - | - | - | Surface Mount | Die | -40°C ~ 150°C |
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IRD3CH82DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
0 |
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- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRD3CH9DB6DIODE GEN PURP 1.2KV 10A DIE Infineon Technologies |
0 |
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- | Die | Bulk | Obsolete | Standard | 1200 V | 10A | 2.7 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | 154 ns | 200 nA @ 1200 V | - | - | - | Surface Mount | Die | -40°C ~ 150°C |
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IRD3CH9DF6DIODE CHIP EMITTER CONTROLLED Infineon Technologies |
0 |
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- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - |