Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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D6001N50TS05XPSA1DIODE GP 5KV 8010A D15026K-1 Infineon Technologies |
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- | DO-200AE | Bulk | Obsolete | Standard | 5000 V | 8010A | 1.3 V @ 6000 A | Standard Recovery >500ns, > 200mA (Io) | - | 400 mA @ 5000 V | - | - | - | Chassis Mount | BG-D15026K-1 | -40°C ~ 160°C |
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56DN06ELEMEVMITPRXPSA1DIODE GP 600V 6400A E-EUPEC-0 Infineon Technologies |
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- | DO-200AB, B-PUK | Tray | Obsolete | Standard | 600 V | 6400A | 1.15 V @ 10000 A | Standard Recovery >500ns, > 200mA (Io) | - | 100 mA @ 600 V | - | - | - | Clamp On | E-EUPEC-0 | 180°C (Max) |
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D1030N22TPRXOSA1DIODE GP 2.2KV 1030A D5726K-1 Infineon Technologies |
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- | DO-200AB, B-PUK | Tray | Obsolete | Standard | 2200 V | 1030A | 1.11 V @ 1000 A | Standard Recovery >500ns, > 200mA (Io) | - | 40 mA @ 2200 V | - | - | - | Clamp On | BG-D5726K-1 | 160°C (Max) |
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ND171N08KHPSA1DIODE GEN PURP 800V 171A PB34-1 Infineon Technologies |
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- | Module | Tray | Obsolete | Standard | 800 V | 171A | 1.26 V @ 500 A | Standard Recovery >500ns, > 200mA (Io) | - | 20 mA @ 800 V | - | - | - | Chassis Mount | BG-PB34-1 | 150°C (Max) |
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ND260N08KHPSA1DIODE GP 800V 260A PB50ND-1 Infineon Technologies |
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- | Module | Tray | Obsolete | Standard | 800 V | 260A | 1.32 V @ 800 A | Standard Recovery >500ns, > 200mA (Io) | - | 30 mA @ 800 V | - | - | - | Chassis Mount | BG-PB50ND-1 | 150°C (Max) |
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IDD15E60BUMA1DIODE GP 600V 29.2A TO252-3 Infineon Technologies |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | Standard | 600 V | 29.2A | 2 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 87 ns | 50 µA @ 600 V | - | - | - | Surface Mount | PG-TO252-3 | -40°C ~ 175°C |
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AIDW10S65C5XKSA1DIODE SIL CARB 650V 10A TO247-3 Infineon Technologies |
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CoolSiC™ | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 303pF @ 1V, 1MHz | Automotive | AEC-Q100/101 | Through Hole | PG-TO247-3-41 | -40°C ~ 175°C |
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AIDW12S65C5XKSA1DIODE SIL CARB 650V 12A TO247-3 Infineon Technologies |
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CoolSiC™ | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 363pF @ 1V, 1MHz | Automotive | AEC-Q100/101 | Through Hole | PG-TO247-3-41 | -40°C ~ 175°C |
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AIDW16S65C5XKSA1DIODE SIL CARB 650V 16A TO247-3 Infineon Technologies |
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CoolSiC™ | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 650 V | 471pF @ 1V, 1MHz | Automotive | AEC-Q100/101 | Through Hole | PG-TO247-3-41 | -40°C ~ 175°C |
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AIDW20S65C5XKSA1DIODE SIL CARB 650V 20A TO247-3 Infineon Technologies |
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CoolSiC™ | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 650 V | 584pF @ 1V, 1MHz | Automotive | AEC-Q100/101 | Through Hole | PG-TO247-3-41 | -40°C ~ 175°C |