Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo de diodo | Tecnología | Voltaje: pico inverso (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Corriente: fuga inversa a Vr | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GBPC3508W-E4/51BRIDGE RECT 1P 800V 35A GBPC-W Vishay General Semiconductor - Diodes Division |
200 |
|
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- | 4-Square, GBPC-W | Box | Active | Single Phase | Standard | 800 V | 35 A | 1.1 V @ 17.5 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | GBPC-W |
|
VS-GBPC2502ABRIDGE RECT 1P 200V 25A GBPC-A Vishay General Semiconductor - Diodes Division |
3,071 |
|
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VS-GBPC | 4-Square, GBPC-A | Tray | Active | Single Phase | Standard | 200 V | 25 A | - | 2 mA @ 200 V | -55°C ~ 150°C (TJ) | - | - | QC Terminal | GBPC-A |
|
VS-GBPC3504ABRIDGE RECT 1P 400V 35A GBPC-A Vishay General Semiconductor - Diodes Division |
139 |
|
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VS-GBPC | 4-Square, GBPC-A | Bulk | Active | Single Phase | Standard | 400 V | 35 A | - | 2 mA @ 400 V | -55°C ~ 150°C (TJ) | - | - | QC Terminal | GBPC-A |
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VS-36MB160ABRIDGE RECT 1P 1.6KV 35A D-34 Vishay General Semiconductor - Diodes Division |
143 |
|
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- | 4-Square, D-34 | Bulk | Active | Single Phase | Standard | 1.6 kV | 35 A | - | 10 µA @ 1600 V | -55°C ~ 150°C (TJ) | - | - | QC Terminal | D-34 |
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MB4S-E3/45BRIDGE RECT 1P 400V 0.5A TO269AA Vishay General Semiconductor - Diodes Division |
4,155 |
|
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- | TO-269AA, 4-BESOP | Tube | Active | Single Phase | Standard | 400 V | 500 mA | 1 V @ 400 mA | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-269AA (MBS) |
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DF10SA-E3/45BRIDGE RECT 1PHASE 1KV 1A DFS Vishay General Semiconductor - Diodes Division |
1,550 |
|
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- | 4-SMD, Gull Wing | Tube | Active | Single Phase | Standard | 1 kV | 1 A | 1.1 V @ 1 A | 5 µA @ 1000 V | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DFS |
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DF04MA-E3/45BRIDGE RECT 1PHASE 400V 1A DFM Vishay General Semiconductor - Diodes Division |
4,762 |
|
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- | 4-EDIP (0.300", 7.62mm) | Tube | Active | Single Phase | Standard | 400 V | 1 A | 1.1 V @ 1 A | 5 µA @ 400 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | DFM |
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DF08MA-E3/45BRIDGE RECT 1PHASE 800V 1A DFM Vishay General Semiconductor - Diodes Division |
3,658 |
|
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- | 4-EDIP (0.300", 7.62mm) | Tube | Active | Single Phase | Standard | 800 V | 1 A | 1.1 V @ 1 A | 5 µA @ 800 V | -55°C ~ 150°C (TJ) | - | - | Through Hole | DFM |
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B250C800G-E4/51BRIDGE RECT 1P 400V 900MA WOG Vishay General Semiconductor - Diodes Division |
2,486 |
|
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- | 4-Circular, WOG | Bulk | Active | Single Phase | Standard | 400 V | 900 mA | 1 V @ 900 mA | 10 µA @ 400 V | -40°C ~ 125°C (TJ) | - | - | Through Hole | WOG |
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B380C800G-E4/51BRIDGE RECT 1P 600V 900MA WOG Vishay General Semiconductor - Diodes Division |
2,268 |
|
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- | 4-Circular, WOG | Bulk | Active | Single Phase | Standard | 600 V | 900 mA | 1 V @ 900 mA | 10 µA @ 600 V | -40°C ~ 125°C (TJ) | - | - | Through Hole | WOG |