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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    SSM6N7002KFU,LF

    SSM6N7002KFU,LF

    MOSFET 2N-CH 60V 0.3A US6

    Toshiba Semiconductor and Storage

    239,024
    RFQ
    SSM6N7002KFU,LF

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 300mA 1.5Ohm @ 100mA, 10V 2.1V @ 250µA 0.6nC @ 4.5V 40pF @ 10V 285mW 150°C (TJ) - - Surface Mount US6
    2N7002DW-7-F

    2N7002DW-7-F

    MOSFET 2N-CH 60V 0.23A SOT363

    Diodes Incorporated

    71,509
    RFQ
    2N7002DW-7-F

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 230mA 7.5Ohm @ 50mA, 5V 2V @ 250µA - 50pF @ 25V 310mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    SSM6L56FE,LM

    SSM6L56FE,LM

    MOSFET N/P-CH 20V 0.8A ES6

    Toshiba Semiconductor and Storage

    58,717
    RFQ
    SSM6L56FE,LM

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 1.5V Drive 20V 800mA (Ta) 235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V 1V @ 1mA 1nC @ 10V 55pF @ 10V, 100pF @ 10V 150mW (Ta) 150°C - - Surface Mount ES6
    SSM6N37FU,LF

    SSM6N37FU,LF

    MOSFET 2N-CH 20V 0.25A US6

    Toshiba Semiconductor and Storage

    147,393
    RFQ
    SSM6N37FU,LF

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.5V Drive 20V 250mA (Ta) 2.2Ohm @ 100mA, 4.5V 1V @ 1mA - 12pF @ 10V 300mW 150°C - - Surface Mount US6
    2N7002DWH6327XTSA1

    2N7002DWH6327XTSA1

    MOSFET 2N-CH 60V 0.3A SOT363

    Infineon Technologies

    48,669
    RFQ
    2N7002DWH6327XTSA1

    Tabla de datos

    OptiMOS™ 6-VSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 300mA 3Ohm @ 500mA, 10V 2.5V @ 250µA 0.6nC @ 10V 20pF @ 25V 500mW -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT363-PO
    2N7002BKS,115

    2N7002BKS,115

    MOSFET 2N-CH 60V 0.3A 6TSSOP

    Nexperia USA Inc.

    210,623
    RFQ
    2N7002BKS,115

    Tabla de datos

    TrenchMOS™ 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 300mA (Ta) 1.6Ohm @ 500mA, 10V 2.1V @ 250µA 0.6nC @ 4.5V 50pF @ 10V 295mW 150°C (TJ) Automotive AEC-Q101 Surface Mount 6-TSSOP
    DMG1016UDW-7

    DMG1016UDW-7

    MOSFET N/P-CH 20V SOT363

    Diodes Incorporated

    26,006
    RFQ
    DMG1016UDW-7

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 1.07A, 845mA 450mOhm @ 600mA, 4.5V 1V @ 250µA 0.74nC @ 4.5V 60.67pF @ 10V 330mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-363
    UM6K33NTN

    UM6K33NTN

    MOSFET 2N-CH 50V 0.2A UMT6

    Rohm Semiconductor

    732,443
    RFQ
    UM6K33NTN

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 1.2V Drive 50V 200mA 2.2Ohm @ 200mA, 4.5V 1V @ 1mA - 25pF @ 10V 120mW 150°C (TJ) - - Surface Mount UMT6
    DMG6602SVT-7

    DMG6602SVT-7

    MOSFET N/P-CH 30V 3.4A TSOT26

    Diodes Incorporated

    95,597
    RFQ
    DMG6602SVT-7

    Tabla de datos

    - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 4.5V Drive 30V 3.4A, 2.8A 60mOhm @ 3.1A, 10V 2.3V @ 250µA 13nC @ 10V 400pF @ 15V 840mW -55°C ~ 150°C (TJ) - - Surface Mount TSOT-26
    EM6K34T2CR

    EM6K34T2CR

    MOSFET 2N-CH 50V 0.2A EMT6

    Rohm Semiconductor

    158,375
    RFQ
    EM6K34T2CR

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 0.9V Drive 50V 200mA 2.2Ohm @ 200mA, 4.5V 800mV @ 1mA - 26pF @ 10V 120mW 150°C (TJ) - - Surface Mount EMT6
    UM6K34NTCN

    UM6K34NTCN

    MOSFET 2N-CH 50V 0.2A UMT6

    Rohm Semiconductor

    67,365
    RFQ
    UM6K34NTCN

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate, 0.9V Drive 50V 200mA 2.2Ohm @ 200mA, 4.5V 800mV @ 1mA - 26pF @ 10V 120mW 150°C (TJ) - - Surface Mount UMT6
    DMG6601LVT-7

    DMG6601LVT-7

    MOSFET N/P-CH 30V 3.8A TSOT26

    Diodes Incorporated

    31,149
    RFQ
    DMG6601LVT-7

    Tabla de datos

    - SOT-23-6 Thin, TSOT-23-6 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 3.8A, 2.5A 55mOhm @ 3.4A, 10V 1.5V @ 250µA 12.3nC @ 10V 422pF @ 15V 850mW -55°C ~ 150°C (TJ) - - Surface Mount TSOT-26
    BSD840NH6327XTSA1

    BSD840NH6327XTSA1

    MOSFET 2N-CH 20V 0.88A SOT363

    Infineon Technologies

    50,426
    RFQ
    BSD840NH6327XTSA1

    Tabla de datos

    OptiMOS™ 6-VSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 880mA 400mOhm @ 880mA, 2.5V 750mV @ 1.6µA 0.26nC @ 2.5V 78pF @ 10V 500mW -55°C ~ 150°C (TJ) - - Surface Mount PG-SOT363-PO
    SSM6L14FE(TE85L,F)

    SSM6L14FE(TE85L,F)

    MOSFET N/P-CH 20V 0.8A ES6

    Toshiba Semiconductor and Storage

    27,811
    RFQ
    SSM6L14FE(TE85L,F)

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 1.5V Drive 20V 800mA (Ta), 720mA (Ta) 240mOhm @ 500mA, 4.5V, 300mOhm @ 400mA, 4.5V 1V @ 1mA 2nC @ 4.5V, 1.76nC @ 4.5V 90pF @ 10V, 110pF @ 10V 150mW (Ta) 150°C - - Surface Mount ES6
    NTZD3154NT1G

    NTZD3154NT1G

    MOSFET 2N-CH 20V 0.54A SOT563

    onsemi

    416,467
    RFQ
    NTZD3154NT1G

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 20V 540mA 550mOhm @ 540mA, 4.5V 1V @ 250µA 2.5nC @ 4.5V 150pF @ 16V 250mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
    2N7002DW

    2N7002DW

    MOSFET 2N-CH 60V 0.115A SC88

    onsemi

    81,939
    RFQ
    2N7002DW

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 60V 115mA 7.5Ohm @ 50mA, 5V 2V @ 250µA - 50pF @ 25V 200mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88 (SC-70-6)
    NTJD4401NT1G

    NTJD4401NT1G

    MOSFET 2N-CH 20V 0.63A SC88

    onsemi

    43,621
    RFQ
    NTJD4401NT1G

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 630mA 375mOhm @ 630mA, 4.5V 1.5V @ 250µA 3nC @ 4.5V 46pF @ 20V 270mW -55°C ~ 150°C (TJ) - - Surface Mount SC-88/SC70-6/SOT-363
    SSM6L09FUTE85LF

    SSM6L09FUTE85LF

    MOSFET N/P-CH 30V 0.4A US6

    Toshiba Semiconductor and Storage

    27,660
    RFQ
    SSM6L09FUTE85LF

    Tabla de datos

    - 6-TSSOP, SC-88, SOT-363 Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 30V 400mA, 200mA 700mOhm @ 200MA, 10V 1.8V @ 100µA - 20pF @ 5V 300mW 150°C (TJ) - - Surface Mount US6
    NTZD3152PT1G

    NTZD3152PT1G

    MOSFET 2P-CH 20V 0.43A SOT563

    onsemi

    49,620
    RFQ
    NTZD3152PT1G

    Tabla de datos

    - SOT-563, SOT-666 Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) - 20V 430mA 900mOhm @ 430mA, 4.5V 1V @ 250µA 2.5nC @ 4.5V 175pF @ 16V 250mW -55°C ~ 150°C (TJ) - - Surface Mount SOT-563
    PMDT290UNE,115

    PMDT290UNE,115

    MOSFET 2N-CH 20V 0.8A SOT666

    Nexperia USA Inc.

    75,074
    RFQ
    PMDT290UNE,115

    Tabla de datos

    TrenchMOS™ SOT-563, SOT-666 Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 800mA 380mOhm @ 500mA, 4.5V 950mV @ 250µA 0.68nC @ 4.5V 83pF @ 10V 500mW -55°C ~ 150°C (TJ) Automotive AEC-Q101 Surface Mount SOT-666
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