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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    IRF7301PBF

    IRF7301PBF

    MOSFET 2N-CH 20V 5.2A 8SO

    Infineon Technologies

    0
    RFQ
    IRF7301PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 5.2A 50mOhm @ 2.6A, 4.5V 700mV @ 250µA 20nC @ 4.5V 660pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7331PBF

    IRF7331PBF

    MOSFET 2N-CH 20V 7A 8SO

    Infineon Technologies

    0
    RFQ
    IRF7331PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 7A 30mOhm @ 7A, 4.5V 1.2V @ 250µA 20nC @ 4.5V 1340pF @ 16V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7379PBF

    IRF7379PBF

    MOSFET N/P-CH 30V 5.8A/4.3A 8SO

    Infineon Technologies

    0
    RFQ
    IRF7379PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) N and P-Channel - 30V 5.8A, 4.3A 45mOhm @ 5.8A, 10V 1V @ 250µA 25nC @ 10V 520pF @ 25V 2.5W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7306PBF

    IRF7306PBF

    MOSFET 2P-CH 30V 3.6A 8SO

    Infineon Technologies

    0
    RFQ
    IRF7306PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 3.6A 100mOhm @ 1.8A, 10V 1V @ 250µA 25nC @ 10V 440pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7325PBF

    IRF7325PBF

    MOSFET 2P-CH 12V 7.8A 8SO

    Infineon Technologies

    0
    RFQ
    IRF7325PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Obsolete MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 7.8A 24mOhm @ 7.8A, 4.5V 900mV @ 250µA 33nC @ 4.5V 2020pF @ 10V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7307PBF

    IRF7307PBF

    MOSFET N/P-CH 20V 5.2A/4.3A 8SO

    Infineon Technologies

    0
    RFQ
    IRF7307PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 20V 5.2A, 4.3A 50mOhm @ 2.6A, 4.5V 700mV @ 250µA 20nC @ 4.5V 660pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7324PBF

    IRF7324PBF

    MOSFET 2P-CH 20V 9A 8SO

    Infineon Technologies

    0
    RFQ
    IRF7324PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 20V 9A 18mOhm @ 9A, 4.5V 1V @ 250µA 63nC @ 5V 2940pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7101PBF

    IRF7101PBF

    MOSFET 2N-CH 20V 3.5A 8SO

    Infineon Technologies

    0
    RFQ
    IRF7101PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 20V 3.5A 100mOhm @ 1.8A, 10V 3V @ 250µA 15nC @ 10V 320pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF9953PBF

    IRF9953PBF

    MOSFET 2P-CH 30V 2.3A 8SO

    Infineon Technologies

    0
    RFQ
    IRF9953PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) 2 P-Channel (Dual) - 30V 2.3A 250mOhm @ 1A, 10V 1V @ 250µA 12nC @ 10V 190pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7309PBF

    IRF7309PBF

    MOSFET N/P-CH 30V 4A/3A 8SO

    Infineon Technologies

    0
    RFQ
    IRF7309PBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tube Discontinued at Digi-Key MOSFET (Metal Oxide) N and P-Channel - 30V 4A, 3A 50mOhm @ 2.4A, 10V 1V @ 250µA 25nC @ 4.5V 520pF @ 15V 1.4W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    Total 496 Record«Prev1... 3233343536373839...50Next»
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