Sesión o Registro
    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    IPG20N04S4L11ATMA1

    IPG20N04S4L11ATMA1

    MOSFET 2N-CH 40V 20A 8TDSON

    Infineon Technologies

    38,095
    RFQ
    IPG20N04S4L11ATMA1

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 20A 11.6mOhm @ 17A, 10V 2.2V @ 15µA 26nC @ 10V 1990pF @ 25V 41W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-4
    TSM300NB06DCR RLG

    TSM300NB06DCR RLG

    MOSFET 2N-CH 60V 6A 8PDFN

    Taiwan Semiconductor Corporation

    5,000
    RFQ
    TSM300NB06DCR RLG

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 6A (Ta), 25A (Tc) 30mOhm @ 6A, 10V 4.5V @ 250µA 17nC @ 10V 1079pF @ 30V 2W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PDFN (5x6)
    IRF7341TRPBF

    IRF7341TRPBF

    MOSFET 2N-CH 55V 4.7A 8SO

    Infineon Technologies

    15,612
    RFQ
    IRF7341TRPBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 55V 4.7A 50mOhm @ 4.7A, 10V 1V @ 250µA 36nC @ 10V 740pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IRF7907TRPBF

    IRF7907TRPBF

    MOSFET 2N-CH 30V 9.1A/11A 8SO

    Infineon Technologies

    4,911
    RFQ
    IRF7907TRPBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 9.1A, 11A 16.4mOhm @ 9.1A, 10V 2.35V @ 25µA 10nC @ 4.5V 850pF @ 15V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    DMTH6016LSDQ-13

    DMTH6016LSDQ-13

    MOSFET 2N-CH 60V 7.6A 8SO

    Diodes Incorporated

    6,463
    RFQ
    DMTH6016LSDQ-13

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 7.6A (Ta) 19.5mOhm @ 10A, 10V 2.5V @ 250µA 17nC @ 10V 864pF @ 30V 1.4W, 1.9W -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount 8-SO
    IRF7343TRPBF

    IRF7343TRPBF

    MOSFET N/P-CH 55V 4.7A/3.4A 8SO

    Infineon Technologies

    38,271
    RFQ
    IRF7343TRPBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 55V 4.7A, 3.4A 50mOhm @ 4.7A, 10V 1V @ 250µA 36nC @ 10V 740pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    IAUC45N04S6N070HATMA1

    IAUC45N04S6N070HATMA1

    MOSFET 2N-CH 40V 45A 8TDSON

    Infineon Technologies

    12,078
    RFQ
    IAUC45N04S6N070HATMA1

    Tabla de datos

    OptiMOS™ 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 40V 45A (Tj) 7mOhm @ 22A, 10V 3V @ 9µA 12nC @ 10V 701pF @ 25V 41W (Tc) -55°C ~ 175°C (TJ) Automotive AEC-Q101 Surface Mount PG-TDSON-8-57
    FDS8949

    FDS8949

    MOSFET 2N-CH 40V 6A 8SOIC

    onsemi

    11,930
    RFQ
    FDS8949

    Tabla de datos

    PowerTrench® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 40V 6A 29mOhm @ 6A, 10V 3V @ 250µA 11nC @ 5V 955pF @ 20V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    AO4611

    AO4611

    MOSFET N/P-CH 60V 8SOIC

    Alpha & Omega Semiconductor Inc.

    18,508
    RFQ
    AO4611

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel Logic Level Gate 60V - 25mOhm @ 6.3A, 10V 3V @ 250µA 58nC @ 10V 2300pF @ 30V, 2900pF @ 30V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    SIZ260DT-T1-GE3

    SIZ260DT-T1-GE3

    MOSFET 2N-CH 80V 8.9A 8POWERPAIR

    Vishay Siliconix

    13,910
    RFQ
    SIZ260DT-T1-GE3

    Tabla de datos

    TrenchFET® Gen IV 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 80V 8.9A (Ta), 24.7A (Tc), 8.9A (Ta), 24.6A (Tc) 24.5mOhm @ 10A, 10V, 24.7mOhm @ 10A, 10V 2.4V @ 250µA 27nC @ 10V 820pF @ 40V 4.3W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PowerPair® (3.3x3.3)
    UT6K30TCR

    UT6K30TCR

    MOSFET 2N-CH 60V 3A HUML2020L8

    Rohm Semiconductor

    6,063
    RFQ
    UT6K30TCR

    Tabla de datos

    - 6-PowerUDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 3A (Ta) 153mOhm @ 3A, 10V 2.7V @ 50µA 2.1nC @ 10V 110pF @ 30V 2W (Ta) 150°C (TJ) - - Surface Mount HUML2020L8
    SIZ250DT-T1-GE3

    SIZ250DT-T1-GE3

    MOSFET 2N-CH 60V 14A 8POWERPAIR

    Vishay Siliconix

    2,813
    RFQ
    SIZ250DT-T1-GE3

    Tabla de datos

    TrenchFET® Gen IV 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 14A (Ta), 38A (Tc) 12.2mOhm @ 10A, 10V, 12.7mOhm @ 10A, 10V 2.4V @ 250µA 21nC @ 10V 840pF @ 30V, 790pF @ 30V 4.3W (Ta), 33W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-PowerPair® (3.3x3.3)
    SI4931DY-T1-GE3

    SI4931DY-T1-GE3

    MOSFET 2P-CH 12V 6.7A 8SOIC

    Vishay Siliconix

    11,587
    RFQ
    SI4931DY-T1-GE3

    Tabla de datos

    TrenchFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 6.7A 18mOhm @ 8.9A, 4.5V 1V @ 350µA 52nC @ 4.5V - 1.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    IRF9358TRPBF

    IRF9358TRPBF

    MOSFET 2P-CH 30V 9.2A 8SO

    Infineon Technologies

    4,873
    RFQ
    IRF9358TRPBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 30V 9.2A 16.3mOhm @ 9.2A, 10V 2.4V @ 25µA 38nC @ 10V 1740pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    AONY36352

    AONY36352

    MOSFET 2N-CH 30V 18.5A 8DFN

    Alpha & Omega Semiconductor Inc.

    14,310
    RFQ
    AONY36352

    Tabla de datos

    - 8-PowerSMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Asymmetrical - 30V 18.5A (Ta), 49A (Tc), 30A (Ta), 85A (Tc) 5.3mOhm @ 20A, 10V, 2mOhm @ 20A, 10V 2.1V @ 250µA, 1.9V @ 250µA 20nC @ 10V, 52nC @ 10V 820pF @ 15V, 2555pF @ 15V 3.1W (Ta), 21W (Tc), 3.1W (Ta), 45W (Tc) -55°C ~ 150°C (TJ) - - Surface Mount 8-DFN (5x6)
    IRF7342TRPBF

    IRF7342TRPBF

    MOSFET 2P-CH 55V 3.4A 8SO

    Infineon Technologies

    9,036
    RFQ
    IRF7342TRPBF

    Tabla de datos

    HEXFET® 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 55V 3.4A 105mOhm @ 3.4A, 10V 1V @ 250µA 38nC @ 10V 690pF @ 25V 2W -55°C ~ 150°C (TJ) - - Surface Mount 8-SO
    TC6320TG-G

    TC6320TG-G

    MOSFET N/P-CH 200V 8SOIC

    Microchip Technology

    3,664
    RFQ
    TC6320TG-G

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 200V - 7Ohm @ 1A, 10V 2V @ 1mA - 110pF @ 25V, 125pF @ 25V - -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    CSD88537ND

    CSD88537ND

    MOSFET 2N-CH 60V 15A 8SOIC

    Texas Instruments

    4,931
    RFQ
    CSD88537ND

    Tabla de datos

    NexFET™ 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 60V 15A 15mOhm @ 8A, 10V 3.6V @ 250µA 18nC @ 10V 1400pF @ 30V 2.1W -55°C ~ 150°C (TJ) - - Surface Mount 8-SOIC
    FDMB3800N

    FDMB3800N

    MOSFET 2N-CH 30V 8MLP MICROFET

    onsemi

    4,430
    RFQ
    FDMB3800N

    Tabla de datos

    PowerTrench® 8-PowerWDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) Logic Level Gate 30V 4.8A 40mOhm @ 4.8A, 10V 3V @ 250µA 5.6nC @ 5V 465pF @ 15V 750mW -55°C ~ 150°C (TJ) - - Surface Mount 8-MLP, MicroFET (3x1.9)
    SI6913DQ-T1-GE3

    SI6913DQ-T1-GE3

    MOSFET 2P-CH 12V 4.9A 8TSSOP

    Vishay Siliconix

    15,688
    RFQ
    SI6913DQ-T1-GE3

    Tabla de datos

    TrenchFET® 8-TSSOP (0.173", 4.40mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 4.9A 21mOhm @ 5.8A, 4.5V 900mV @ 400µA 28nC @ 4.5V - 830mW -55°C ~ 150°C (TJ) - - Surface Mount 8-TSSOP
    Total 5737 Record«Prev12345678910...287Next»
    KATY Electronic Technology Co., LTD

    Casa

    KATY Electronic Technology Co., LTD

    Productos

    KATY Electronic Technology Co., LTD

    Teléfono

    KATY Electronic Technology Co., LTD

    Usuarios