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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSZ180P03NS3EGATMA1MOSFET P-CH 30V 9A/39.5A TSDSON Infineon Technologies |
3,590 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta), 39.5A (Tc) | 6V, 10V | 18mOhm @ 20A, 10V | 3.1V @ 48µA | 30 nC @ 10 V | ±25V | 2220 pF @ 15 V | - | 2.1W (Ta), 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8 |
|
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BSZ050N03LSGATMA1MOSFET N-CH 30V 16A/40A 8TSDSON Infineon Technologies |
7,267 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 16A (Ta), 40A (Tc) | 4.5V, 10V | 5mOhm @ 20A, 10V | 2.2V @ 250µA | 35 nC @ 10 V | ±20V | 2800 pF @ 15 V | - | 2.1W (Ta), 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8 |
|
|
BSZ130N03MSGATMA1MOSFET N-CH 30V 9A/35A 8TSDSON Infineon Technologies |
13,775 |
|
Tabla de datos |
OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 9A (Ta), 35A (Tc) | 4.5V, 10V | 11.5mOhm @ 20A, 10V | 2V @ 250µA | 17 nC @ 10 V | ±20V | 1300 pF @ 15 V | - | 2.1W (Ta), 25W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSDSON-8 |
|
IPD60R1K5PFD7SAUMA1MOSFET N-CH 600V 3.6A TO252 Infineon Technologies |
2,422 |
|
Tabla de datos |
CoolMOS™ PFD7 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 3.6A (Tc) | 10V | 1.5Ohm @ 700mA, 10V | 4.5V @ 40µA | 4.6 nC @ 10 V | ±20V | 169 pF @ 400 V | - | 22W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3-344 |
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IRF9335TRPBFMOSFET P-CH 30V 5.4A 8SO Infineon Technologies |
12,117 |
|
Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 5.4A (Ta) | 4.5V, 10V | 59mOhm @ 5.4A, 10V | 2.4V @ 10µA | 14 nC @ 10 V | ±20V | 386 pF @ 25 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
|
IPU80R4K5P7AKMA1MOSFET N-CH 800V 1.5A TO251-3 Infineon Technologies |
1,462 |
|
Tabla de datos |
CoolMOS™ | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 1.5A (Tc) | 10V | 4.5Ohm @ 400mA, 10V | 3.5V @ 200µA | 4 nC @ 10 V | ±20V | 250 pF @ 500 V | - | 13W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO251-3-21 |
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IPD60R1K0CEAUMA1MOSFET N-CH 600V 6.8A 61W TO252 Infineon Technologies |
7,317 |
|
Tabla de datos |
CoolMOS™ CE | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6.8A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 130µA | 13 nC @ 10 V | ±20V | 280 pF @ 100 V | - | 61W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TO252-3-344 |
|
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IPD50N04S410ATMA1MOSFET N-CH 40V 50A TO252-3-313 Infineon Technologies |
2,488 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 10V | 9.3mOhm @ 50A, 10V | 4V @ 15µA | 18.2 nC @ 10 V | ±20V | 1430 pF @ 25 V | - | 41W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-313 |
|
ISP25DP06LMXTSA1MOSFET P-CH 60V 1.9A SOT223-4 Infineon Technologies |
1,229 |
|
Tabla de datos |
OptiMOS™ | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 1.9A (Ta) | 4.5V, 10V | 250mOhm @ 1.9A, 10V | 2V @ 270µA | 13.9 nC @ 10 V | ±20V | 420 pF @ 30 V | - | 1.8W (Ta), 5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223-4 |
|
IPN60R600P7SATMA1MOSFET N-CHANNEL 600V 6A SOT223 Infineon Technologies |
3,616 |
|
Tabla de datos |
CoolMOS™ P7 | TO-261-4, TO-261AA | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 6A (Tc) | 10V | 600mOhm @ 1.7A, 10V | 4V @ 80µA | 9 nC @ 10 V | ±20V | 363 pF @ 400 V | - | 7W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT223 |
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