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FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT20M38BVRGMOSFET N-CH 200V 67A TO247 Microchip Technology |
44 | - |
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Tabla de datos |
POWER MOS V® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 200 V | 67A (Tc) | 10V | 38mOhm @ 500mA, 10V | 4V @ 1mA | 225 nC @ 10 V | ±30V | 6120 pF @ 25 V | - | 370W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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APT56F50B2MOSFET N-CH 500V 56A T-MAX Microchip Technology |
58 | - |
|
Tabla de datos |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 56A (Tc) | 10V | 100mOhm @ 28A, 10V | 5V @ 2.5mA | 220 nC @ 10 V | ±30V | 8800 pF @ 25 V | - | 780W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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MSC080SMA120SSICFET N-CH 1200V 35A D3PAK Microchip Technology |
24 | - |
|
Tabla de datos |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 35A | 20V | 100mOhm @ 15A, 20V | 2.8V @ 1mA | 64 nC @ 20 V | +23V, -10V | 838 pF @ 1000 V | - | 182W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
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APT5014BLLGMOSFET N-CH 500V 35A TO247 Microchip Technology |
41 | - |
|
Tabla de datos |
POWER MOS 7® | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 35A (Tc) | 10V | 140mOhm @ 17.5A, 10V | 5V @ 1mA | 72 nC @ 10 V | ±30V | 3261 pF @ 25 V | - | 403W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 [B] |
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MSC035SMA070SMOSFET N-CH 700V D3PAK Microchip Technology |
68 | - |
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Tabla de datos |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 65A (Tc) | 20V | 44mOhm @ 30A, 20V | 2.7V @ 1mA | 99 nC @ 20 V | +23V, -10V | 2010 pF @ 700 V | - | 206W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
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APT106N60B2C6MOSFET N-CH 600V 106A T-MAX Microchip Technology |
38 | - |
|
Tabla de datos |
CoolMOS™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 106A (Tc) | 10V | 35mOhm @ 53A, 10V | 3.5V @ 3.4mA | 308 nC @ 10 V | ±20V | 8390 pF @ 25 V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT5010LVRGMOSFET N-CH 500V 47A TO264 Microchip Technology |
19 | - |
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Tabla de datos |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 500 V | 47A (Tc) | - | 100mOhm @ 500mA, 10V | 4V @ 2.5mA | 470 nC @ 10 V | - | 8900 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT29F100B2MOSFET N-CH 1000V 30A T-MAX Microchip Technology |
11 | - |
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Tabla de datos |
POWER MOS 8™ | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 30A (Tc) | 10V | 440mOhm @ 16A, 10V | 5V @ 2.5mA | 260 nC @ 10 V | ±30V | 8500 pF @ 25 V | - | 1040W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT106N60LC6MOSFET N-CH 600V 106A TO264 Microchip Technology |
38 | - |
|
Tabla de datos |
CoolMOS™ | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 600 V | 106A (Tc) | 10V | 35mOhm @ 53A, 10V | 3.5V @ 3.4mA | 308 nC @ 10 V | ±20V | 8390 pF @ 25 V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 (L) |
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APT48M80LMOSFET N-CH 800V 49A TO264 Microchip Technology |
82 | - |
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Tabla de datos |
- | TO-264-3, TO-264AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 49A (Tc) | 10V | 200mOhm @ 24A, 10V | 5V @ 2.5mA | 305 nC @ 10 V | ±30V | 9330 pF @ 25 V | - | 1135W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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