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FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APTM100UM45DAGMOSFET N-CH 1000V 215A SP6 Microchip Technology |
34 | - |
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Tabla de datos |
POWER MOS 7® | SP6 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 1000 V | 215A (Tc) | 10V | 52mOhm @ 107.5A, 10V | 5V @ 30mA | 1602 nC @ 10 V | ±30V | 42700 pF @ 25 V | - | 5000W (Tc) | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | SP6 |
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LND150N3-G-P002MOSFET N-CH 500V 30MA TO92-3 Microchip Technology |
1,829 | - |
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Tabla de datos |
- | TO-226-3, TO-92-3 (TO-226AA) | Tape & Reel (TR) | Active | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 500 V | 30mA (Tj) | 0V | 1000Ohm @ 500µA, 0V | - | - | ±20V | 10 pF @ 25 V | - | 740mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-92-3 |
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TN2640LG-GMOSFET N-CH 400V 260MA 8SOIC Microchip Technology |
2,593 | - |
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Tabla de datos |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 400 V | 260mA (Tj) | 4.5V, 10V | 5Ohm @ 500mA, 10V | 2V @ 2mA | - | ±20V | 225 pF @ 25 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
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APT4F120SMOSFET N-CH 1200V 4A D3PAK Microchip Technology |
128 | - |
|
Tabla de datos |
POWER MOS 8™ | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 1200 V | 4A (Tc) | 10V | 4.2Ohm @ 2A, 10V | 5V @ 500µA | 43 nC @ 10 V | ±30V | 1385 pF @ 25 V | - | 175W (Tc) | - | - | - | Surface Mount | D3PAK |
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MSC360SMA120SCT/RMOSFET SIC 1200 V 360 MOHM PSMT Microchip Technology |
1,300 | - |
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- |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 11A (Tc) | 20V | 450mOhm @ 5A, 20V | 3.14V @ 250µA | 21 nC @ 20 V | +23V, -10V | 255 pF @ 1000 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-268 |
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MSC360SMA120SDT/RMOSFET SIC 1200 V 360 MOHM TO-26 Microchip Technology |
795 | - |
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Tabla de datos |
mSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 12A (Tc) | 18V, 20V | 450mOhm @ 5A, 20V | 5V @ 250µA | 21 nC @ 20 V | +23V, -10V | 258 pF @ 1.2 kV | - | 92W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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MSC360SMA120BMOSFET SIC 1200 V 360 MOHM TO-24 Microchip Technology |
130 | - |
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Tabla de datos |
- | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 11A (Tc) | 20V | 450mOhm @ 5A, 20V | 3.14V @ 500µA (Typ) | 21 nC @ 20 V | +23V, -10V | 255 pF @ 1000 V | - | 78W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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MSC180SMA120SDT/RMOSFET SIC 1200 V 180 MOHM TO-26 Microchip Technology |
773 | - |
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Tabla de datos |
mSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 21A (Tc) | 18V, 20V | 225mOhm @ 8A, 20V | 5V @ 500µA | 36 nC @ 20 V | +23V, -10V | 481 pF @ 1.2 kV | - | 146W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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MSC090SMA070SCT/RMOSFET SIC 700 V 90 MOHM PSMT Microchip Technology |
1,300 | - |
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- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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MSC090SMA070SDT/RMOSFET SIC 700 V 90 MOHM TO-263- Microchip Technology |
800 | - |
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Tabla de datos |
mSiC™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 700 V | 34A (Tc) | 18V, 20V | 112mOhm @ 15A, 20V | 5V @ 750µA | 41 nC @ 20 V | +23V, -10V | 806 pF @ 700 V | - | 156W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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