Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GD25MPS17HDIODE SIL CARB 1.7KV 56A TO247-2 GeneSiC Semiconductor |
1,285 |
|
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SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 56A | 1.8 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 1083pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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GC05MPS33JDIODE SIL CARB 3.3KV 5A TO263-7 GeneSiC Semiconductor |
1,114 |
|
![]() Tabla de datos |
SiC Schottky MPS™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tube | Active | SiC (Silicon Carbide) Schottky | 3300 V | 5A | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Surface Mount | TO-263-7 | 175°C |
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S300YDIODE GEN PURP 1.6KV 300A DO9 GeneSiC Semiconductor |
54 |
|
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- | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 1600 V | 300A | 1.2 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 1600 V | - | - | - | Chassis, Stud Mount | DO-9 | -60°C ~ 180°C |
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GC50MPS33HDIODE SIL CARB 3.3KV 50A TO247-2 GeneSiC Semiconductor |
78 |
|
![]() Tabla de datos |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 3300 V | 50A | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-247-2 | 175°C |
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GD02MPS12EDIODE SIL CARB 1.2KV 8A TO252-2 GeneSiC Semiconductor |
2,809 |
|
![]() Tabla de datos |
SiC Schottky MPS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 8A | 1.8 V @ 2 A | No Recovery Time > 500mA (Io) | 0 ns | 5 µA @ 1200 V | 73pF @ 1V, 1MHz | - | - | Surface Mount | TO-252-2 | -55°C ~ 175°C |
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GD30MPS06ADIODE SIL CARB 650V 30A TO220-2 GeneSiC Semiconductor |
1,744 |
|
![]() Tabla de datos |
SiC Schottky MPS™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-220-2 | 175°C |
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1N3881DIODE GEN PURP 200V 6A DO4 GeneSiC Semiconductor |
414 |
|
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- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 200 V | 6A | 1.4 V @ 6 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 15 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 150°C |
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GD20MPS12HDIODE SIL CARB 1.2KV 39A TO247-2 GeneSiC Semiconductor |
2,961 |
|
![]() Tabla de datos |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 39A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 737pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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GD30MPS12HDIODE SIL CARB 1.2KV 55A TO247-2 GeneSiC Semiconductor |
503 |
|
![]() Tabla de datos |
SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 55A | 1.8 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 20 µA @ 1200 V | 1101pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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1N1190ARDIODE GEN PURP REV 600V 40A DO5 GeneSiC Semiconductor |
869 |
|
![]() Tabla de datos |
- | DO-203AB, DO-5, Stud | Bulk | Active | Standard, Reverse Polarity | 600 V | 40A | 1.1 V @ 40 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-5 | -65°C ~ 190°C |