Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GD30MPS12J-TRDIODE SIL CARB 1.2KV 59A TO263-7 GeneSiC Semiconductor |
2,036 |
|
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SiC Schottky MPS™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 59A | 1.8 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1200 V | 1101pF @ 1V, 1MHz | - | - | Surface Mount | TO-263-7 | -55°C ~ 175°C |
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GD15MPS17HDIODE SIL CARB 1.7KV 36A TO247-2 GeneSiC Semiconductor |
1,214 |
|
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SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 36A | 1.8 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 1700 V | 1082pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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GD50MPS12HDIODE SIL CARB 1.2KV 92A TO247-2 GeneSiC Semiconductor |
124 |
|
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SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 92A | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 15 µA @ 1200 V | 1835pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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GD10MPS12HDIODE SIL CARB 1.2KV 10A TO247-2 GeneSiC Semiconductor |
540 |
|
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SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | - | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-247-2 | 175°C |
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GD30MPS06HDIODE SIL CARB 650V 49A TO247-2 GeneSiC Semiconductor |
614 |
|
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SiC Schottky MPS™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 49A | - | No Recovery Time > 500mA (Io) | - | - | 735pF @ 1V, 1MHz | - | - | Through Hole | TO-247-2 | -55°C ~ 175°C |
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GD20MPS12ADIODE SIL CARB 1.2KV 42A TO220-2 GeneSiC Semiconductor |
2,307 |
|
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SiC Schottky MPS™ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 42A | 1.8 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 10 µA @ 1200 V | 737pF @ 1V, 1MHz | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |
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1N3891DIODE GEN PURP 200V 12A DO4 GeneSiC Semiconductor |
887 |
|
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- | DO-203AA, DO-4, Stud | Bulk | Active | Standard | 200 V | 12A | 1.4 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | 200 ns | 25 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-4 | -65°C ~ 150°C |
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1N1184DIODE GEN PURP 100V 35A DO5 GeneSiC Semiconductor |
191 |
|
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- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 100 V | 35A | 1.2 V @ 35 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-5 | -65°C ~ 190°C |
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1N1184ADIODE GEN PURP 100V 40A DO5 GeneSiC Semiconductor |
260 |
|
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- | DO-203AB, DO-5, Stud | Bulk | Active | Standard | 100 V | 40A | 1.1 V @ 40 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-5 | -65°C ~ 200°C |
|
1N2130ARDIODE GEN PURP REV 150V 60A DO5 GeneSiC Semiconductor |
245 |
|
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- | DO-203AB, DO-5, Stud | Bulk | Active | Standard, Reverse Polarity | 150 V | 60A | 1.1 V @ 60 A | Standard Recovery >500ns, > 200mA (Io) | - | 10 µA @ 50 V | - | - | - | Chassis, Stud Mount | DO-5 | -65°C ~ 200°C |