Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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IDW32G65C5BXKSA2DIODE SIL CARB 650V 16A TO247-3 Infineon Technologies |
230 |
|
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CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 470pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
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IDWD25G200C5XKSA1SIC DISCRETE Infineon Technologies |
240 |
|
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CoolSiC™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 77A | 1.75 V @ 25 A | No Recovery Time > 500mA (Io) | 0 ns | 375 µA @ 2 kV | 2850pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-2-U01 | -55°C ~ 175°C |
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IDWD40G200C5XKSA1SIC DISCRETE Infineon Technologies |
240 |
|
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CoolSiC™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 114A | 1.75 V @ 40 A | No Recovery Time > 500mA (Io) | 0 ns | 600 µA @ 2 kV | 4550pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-2-U01 | -55°C ~ 175°C |
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IDWD50G200C5XKSA1SIC DISCRETE Infineon Technologies |
240 |
|
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CoolSiC™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 140A | 1.75 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 750 µA @ 2 kV | 5700pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-2-U01 | -55°C ~ 175°C |
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IDYH80G200C5XKSA1SIC DISCRETE Infineon Technologies |
240 |
|
- |
CoolSiC™ | TO-247-4 Variant | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 157A | 1.75 V @ 80 A | - | - | 1.2 A @ 2000 V | 9100pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-U04 | -55°C ~ 175°C |
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IDWD80G200C5XKSA1SIC DISCRETE Infineon Technologies |
240 |
|
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CoolSiC™ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 2000 V | 214A | 1.75 V @ 80 A | No Recovery Time > 500mA (Io) | 0 ns | 1.2 mA @ 2 kV | 9100pF @ 1V, 100kHz | - | - | Through Hole | PG-TO247-2-U01 | -55°C ~ 175°C |
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BAS16B5003DIODE GP 80V 250MA SOT23-3-11 Infineon Technologies |
1,073,000 |
|
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BAS16 | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | Standard | 80 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 1 µA @ 75 V | 2pF @ 0V, 1MHz | - | - | Surface Mount | PG-SOT23-3-11 | 150°C |
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BAS16B5000DIODE GP 80V 250MA SOT23-3-11 Infineon Technologies |
180,000 |
|
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BAS16 | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | Standard | 80 V | 250mA | 1.25 V @ 150 mA | Fast Recovery =< 500ns, > 200mA (Io) | 4 ns | 1 µA @ 75 V | 2pF @ 0V, 1MHz | - | - | Surface Mount | PG-SOT23-3-11 | 150°C |
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BAS70-02W E6327DIODE SCHOTTKY 70V 70MA SCD80-2 Infineon Technologies |
100,337 |
|
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- | SC-80 | Bulk | Active | Schottky | 70 V | 70mA | 1 V @ 15 mA | Small Signal =< 200mA (Io), Any Speed | 100 ps | 100 nA @ 50 V | 1.5pF @ 0V, 1MHz | - | - | Surface Mount | PG-SCD80-2 | 150°C |
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BAT54B5000DIODE SCHOT 30V 200MA SOT23-3-11 Infineon Technologies |
90,000 |
|
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BAT54 | TO-236-3, SC-59, SOT-23-3 | Bulk | Active | Schottky | 30 V | 200mA | 800 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 2 µA @ 25 V | 10pF @ 1V, 1MHz | - | - | Surface Mount | PG-SOT23-3-11 | 150°C |