Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDP20E65D2XKSA1DIODE GP 650V 40A TO220-2-1 Infineon Technologies |
460 |
|
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- | TO-220-2 | Tube | Active | Standard | 650 V | 40A | 2.2 V @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | 32 ns | 40 µA @ 650 V | - | - | - | Through Hole | PG-TO220-2-1 | -40°C ~ 175°C |
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IDK04G65C5XTMA2DIODE SIL CARB 650V 4A TO263-2 Infineon Technologies |
803 |
|
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CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.8 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 670 µA @ 650 V | 130pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
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IDP18E120XKSA1DIODE GP 1.2KV 31A TO220-2-2 Infineon Technologies |
423 |
|
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- | TO-220-2 | Tube | Active | Standard | 1200 V | 31A | 2.15 V @ 18 A | Fast Recovery =< 500ns, > 200mA (Io) | 195 ns | 100 µA @ 1200 V | - | - | - | Through Hole | PG-TO220-2-2 | -55°C ~ 150°C |
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IDP08E65D2XKSA1DIODE GEN PURP 650V 8A TO220-2 Infineon Technologies |
2 |
|
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- | TO-220-2 | Bulk | Active | Standard | 650 V | 8A | 2.3 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 40 ns | 40 µA @ 650 V | - | - | - | Through Hole | TO-220-2 | -40°C ~ 175°C |
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IDL06G65C5XUMA2DIODE SIL CARBIDE 650V 6A VSON-4 Infineon Technologies |
2,908 |
|
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CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
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IDK05G120C5XTMA1DIODE SIC 1.2KV 19.1A TO263-1 Infineon Technologies |
955 |
|
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CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 19.1A | 1.8 V @ 5 A | No Recovery Time > 500mA (Io) | - | 33 µA @ 1200 V | 301pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2-1 | -55°C ~ 175°C |
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IDDD10G65C6XTMA1DIODE SIL CARB 650V 29A HDSOP-10 Infineon Technologies |
1,323 |
|
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CoolSiC™+ | 10-PowerSOP Module | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 29A | - | No Recovery Time > 500mA (Io) | 0 ns | 33 µA @ 420 V | 495pF @ 1V, 1MHz | - | - | Surface Mount | PG-HDSOP-10-1 | -55°C ~ 175°C |
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IDW10G65C5XKSA1DIODE SIL CARB 650V 10A TO247-3 Infineon Technologies |
232 |
|
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CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
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IDD08SG60CXTMA2DIODE SIL CARB 600V 8A TO252-3 Infineon Technologies |
178 |
|
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CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 600 V | 8A | 2.1 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 600 V | 240pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
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IDH10SG60CXKSA2DIODE SIL CARB 600V 10A TO220-1 Infineon Technologies |
330 |
|
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CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 10A | 2.1 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 600 V | 290pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |