Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDL10G65C5XUMA2DIODE SIL CARB 650V 10A VSON-4 Infineon Technologies |
151 |
|
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CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
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IDH10G65C5XKSA2DIODE SIL CARB 650V 10A TO220-1 Infineon Technologies |
1,046 |
|
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CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 180 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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IDK12G65C5XTMA2DIODE SIL CARB 650V 12A TO263-2 Infineon Technologies |
1,257 |
|
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CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.8 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | - | 360pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2 | -55°C ~ 175°C |
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IDL12G65C5XUMA2DIODE SIL CARB 650V 12A VSON-4 Infineon Technologies |
6,146 |
|
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CoolSiC™+ | 4-PowerTSFN | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 650 V | 360pF @ 1V, 1MHz | - | - | Surface Mount | PG-VSON-4 | -55°C ~ 150°C |
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IDWD150E65E7XKSA1DIODE GEN PURP 650V 200A TO247-2 Infineon Technologies |
328 |
|
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- | TO-247-2 | Tube | Active | Standard | 650 V | 200A | 2.1 V @ 150 A | Fast Recovery =< 500ns, > 5A (Io) | 97 ns | 20 µA @ 650 V | - | - | - | Through Hole | PG-TO247-2-2 | -40°C ~ 175°C |
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IDDD20G65C6XTMA1DIODE SIL CARB 650V 51A HDSOP-10 Infineon Technologies |
606 |
|
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CoolSiC™+ | 10-PowerSOP Module | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 51A | - | No Recovery Time > 500mA (Io) | 0 ns | 67 µA @ 420 V | 970pF @ 1V, 1MHz | - | - | Surface Mount | PG-HDSOP-10-1 | -55°C ~ 175°C |
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IDWD20G120C5XKSA1DIODE SIL CARB 1.2KV 62A TO247-2 Infineon Technologies |
240 |
|
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CoolSiC™+ | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 62A | 1.65 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 166 µA @ 1200 V | 1368pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-2 | -55°C ~ 175°C |
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IDW30G65C5XKSA1DIODE SIL CARB 650V 30A TO247-3 Infineon Technologies |
931 |
|
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CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 30A | 1.7 V @ 30 A | No Recovery Time > 500mA (Io) | 0 ns | 220 µA @ 650 V | 860pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
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BAT165E6874HTMA1DIODE SCHOTT 40V 750MA SOD323-2 Infineon Technologies |
4,969 |
|
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- | SC-76, SOD-323 | Tape & Reel (TR) | Active | Schottky | 40 V | 750mA | 740 mV @ 750 mA | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 40 V | 8.4pF @ 10V, 1MHz | Automotive | AEC-Q101 | Surface Mount | PG-SOD323-2 | 150°C |
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BAT5402LRHE6327XTSA1DIODE SCHOTT 30V 200MA TSLP-2-7 Infineon Technologies |
8,312 |
|
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- | SOD-882 | Tape & Reel (TR) | Active | Schottky | 30 V | 200mA | 800 mV @ 100 mA | Small Signal =< 200mA (Io), Any Speed | 5 ns | 2 µA @ 25 V | 10pF @ 1V, 1MHz | - | - | Surface Mount | PG-TSLP-2-7 | 150°C (Max) |