Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IDH12G65C5XKSA2DIODE SIL CARB 650V 12A TO220-1 Infineon Technologies |
850 |
|
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CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 650 V | 360pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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IDD10SG60CXTMA2DIODE SIL CARB 600V 10A TO252-3 Infineon Technologies |
217 |
|
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CoolSiC™+ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 600 V | 10A | 2.1 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 90 µA @ 600 V | 290pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO252-3 | -55°C ~ 175°C |
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IDH16G65C5XKSA2DIODE SIL CARB 650V 16A TO220-1 Infineon Technologies |
1,984 |
|
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CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 650 V | 470pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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IDH12SG60CXKSA2DIODE SIL CARB 600V 12A TO220-1 Infineon Technologies |
396 |
|
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CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 12A | 2.1 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 600 V | 310pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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IDH16G120C5XKSA1DIODE SIL CARB 1.2KV 16A TO220-1 Infineon Technologies |
243 |
|
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CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 16A | 1.95 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 1200 V | 730pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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IDK16G120C5XTMA1DIODE SIL CARB 1.2KV 40A TO263-1 Infineon Technologies |
437 |
|
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CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 40A | 1.95 V @ 16 A | No Recovery Time > 500mA (Io) | - | 80 µA @ 1200 V | 730pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2-1 | -55°C ~ 175°C |
|
IDW40G65C5BXKSA2DIODE SIL CARB 650V 20A TO247-3 Infineon Technologies |
240 |
|
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CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.7 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 210 µA @ 650 V | 590pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |
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BAS40E8224HTMA1AF SCHOTTKY DIODES Infineon Technologies |
20,000 |
|
- |
- | - | Tape & Reel (TR) | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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BAS4002LE6327XTMA1DIODE SCHOTT 40V 120MA TSLP-2-1 Infineon Technologies |
13,946 |
|
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- | SOD-882 | Tape & Reel (TR) | Active | Schottky | 40 V | 120mA | 1 V @ 40 mA | Small Signal =< 200mA (Io), Any Speed | 100 ps | 1 µA @ 30 V | 5pF @ 0V, 1MHz | - | - | Surface Mount | PG-TSLP-2-1 | -55°C ~ 150°C |
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IDP08E65D1XKSA1DIODE GEN PURP 650V 8A TO220-2 Infineon Technologies |
0 |
|
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- | TO-220-2 | Bulk | Active | Standard | 650 V | 8A | 1.7 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | 80 ns | 40 µA @ 650 V | - | - | - | Through Hole | TO-220-2 | -40°C ~ 175°C |