Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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IDK02G120C5XTMA1DIODE SIC 1.2KV 11.8A TO263-1 Infineon Technologies |
688 |
|
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CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 11.8A | 1.65 V @ 2 A | No Recovery Time > 500mA (Io) | - | 18 µA @ 1200 V | 182pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2-1 | -55°C ~ 175°C |
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IDW40E65D1FKSA1DIODE GP 650V 80A TO247-3-1 Infineon Technologies |
110 |
|
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- | TO-247-3 | Tube | Active | Standard | 650 V | 80A | 1.7 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 129 ns | 40 µA @ 650 V | - | - | - | Through Hole | PG-TO247-3-1 | -40°C ~ 175°C |
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IDH06G65C5XKSA2DIODE SIL CARB 650V 6A TO220-2-1 Infineon Technologies |
1,287 |
|
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CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.7 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 110 µA @ 650 V | 190pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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IDW40E65D2FKSA1DIODE GP 650V 80A TO247-3-1 Infineon Technologies |
2,289 |
|
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- | TO-247-3 | Tube | Active | Standard | 650 V | 80A | 2.3 V @ 40 A | Fast Recovery =< 500ns, > 200mA (Io) | 75 ns | 40 µA @ 650 V | - | - | - | Through Hole | PG-TO247-3-1 | -40°C ~ 175°C |
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IDW75E60FKSA1DIODE GP 600V 120A TO247-3-1 Infineon Technologies |
454 |
|
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- | TO-247-3 | Tube | Active | Standard | 600 V | 120A | 2 V @ 75 A | Fast Recovery =< 500ns, > 200mA (Io) | 121 ns | 40 µA @ 600 V | - | - | - | Through Hole | PG-TO247-3-1 | -55°C ~ 175°C |
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IDDD08G65C6XTMA1DIODE SIL CARB 650V 24A HDSOP-10 Infineon Technologies |
1,875 |
|
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CoolSiC™+ | 10-PowerSOP Module | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 24A | - | No Recovery Time > 500mA (Io) | 0 ns | 27 µA @ 420 V | 401pF @ 1V, 1MHz | - | - | Surface Mount | PG-HDSOP-10-1 | -55°C ~ 175°C |
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IDH08G120C5XKSA1DIODE SIL CARB 1.2KV TO220-1 Infineon Technologies |
285 |
|
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CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 22.8A | 1.95 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 1200 V | 365pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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IDH08SG60CXKSA2DIODE SIL CARB 600V 8A TO220-2-1 Infineon Technologies |
1,662 |
|
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CoolSiC™+ | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 600 V | 8A | 2.1 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 600 V | 240pF @ 1V, 1MHz | - | - | Through Hole | PG-TO220-2-1 | -55°C ~ 175°C |
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IDK10G120C5XTMA1DIODE SIC 1.2KV 31.9A TO263-1 Infineon Technologies |
835 |
|
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CoolSiC™+ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 1200 V | 31.9A | 1.8 V @ 10 A | No Recovery Time > 500mA (Io) | - | 18 µA @ 1200 V | 525pF @ 1V, 1MHz | - | - | Surface Mount | PG-TO263-2-1 | -55°C ~ 175°C |
|
IDW12G65C5XKSA1DIODE SIL CARB 650V 12A TO247-3 Infineon Technologies |
268 |
|
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CoolSiC™+ | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 190 µA @ 650 V | 360pF @ 1V, 1MHz | - | - | Through Hole | PG-TO247-3 | -55°C ~ 175°C |