Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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RB078BM30STLDIODE SCHOTTKY 30V 5A TO252 Rohm Semiconductor |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | Schottky | 30 V | 5A | 720 mV @ 5 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 5 µA @ 30 V | - | - | - | Surface Mount | TO-252 | 150°C (Max) |
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RFN30TS6SGC11DIODE GEN PURP 600V 30A TO247 Rohm Semiconductor |
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- | TO-247-3 | Bulk | Not For New Designs | Standard | 600 V | 30A | 1.55 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 60 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247 | 150°C (Max) |
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RFUH30TS6SGC11DIODE GEN PURP 600V 15A TO247 Rohm Semiconductor |
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- | TO-247-3 | Tube | Not For New Designs | Standard | 600 V | 15A | 2.8 V @ 30 A | Fast Recovery =< 500ns, > 200mA (Io) | 35 ns | 10 µA @ 600 V | - | - | - | Through Hole | TO-247 | 150°C (Max) |
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SCS106AGCDIODE SIL CARB 600V 6A TO220AC Rohm Semiconductor |
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 600 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 600 V | 260pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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RBLQ20BGE10TLTRENCH MOS STRUCTURE, 100V, 20A, Rohm Semiconductor |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | Schottky | 100 V | 20A | 860 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80 µA @ 100 V | - | - | - | Surface Mount | TO-252GE | 150°C |
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SCS308AHGC9DIODE SIL CARB 650V 8A TO220ACP Rohm Semiconductor |
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.5 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 40 µA @ 650 V | 400pF @ 1V, 1MHz | - | - | Through Hole | TO-220ACP | 175°C (Max) |
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SCS206AGHRCDIODE SIL CARB 650V 6A TO220AC Rohm Semiconductor |
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.55 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 600 V | 219pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
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SCS210AGCDIODE SIL CARB 650V 10A TO220AC Rohm Semiconductor |
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.55 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 600 V | 365pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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SCS205KGCDIODE SIL CARB 1.2KV 5A TO220AC Rohm Semiconductor |
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 1200 V | 5A | 1.6 V @ 5 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 1200 V | 270pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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RBLQ20BM10FHTLTRENCH MOS STRUCTURE, 100V, 20A, Rohm Semiconductor |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | Schottky | 100 V | 20A | 860 mV @ 20 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 80 µA @ 100 V | - | Automotive | AEC-Q101 | Surface Mount | TO-252 | 150°C |