Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Voltaje: CC inverso (Vr) (máx.) | Corriente: rectificada promedio (Io) | Voltaje: directo (Vf) (máx.) a If | Velocidad | Recuperación inversa Tiempo (trr) | Corriente: fuga inversa a Vr | Capacitancia @ Vr, F | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete | Temperatura de funcionamiento - Unión |
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SCS206AMCDIODE SIL CARB 650V 6A TO220FM Rohm Semiconductor |
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- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.55 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 120 µA @ 600 V | 219pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
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SCS306APC9DIODE SILICON CARBIDE 650V 6A Rohm Semiconductor |
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | - | 175°C (Max) |
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SCS304AMCDIODE SIL CARB 650V 4A TO220FM Rohm Semiconductor |
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- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.5 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 20 µA @ 650 V | 200pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
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SCS215AECDIODE SIL CARBIDE 650V 15A TO247 Rohm Semiconductor |
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- | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.55 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 550pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | 175°C (Max) |
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SCS215AGHRCDIODE SIL CARB 650V 15A TO220AC Rohm Semiconductor |
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 15A | 1.55 V @ 15 A | No Recovery Time > 500mA (Io) | 0 ns | 300 µA @ 600 V | 550pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |
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SCS220AGCDIODE SIL CARB 650V 20A TO220AC Rohm Semiconductor |
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- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | 175°C (Max) |
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SCS208AMCDIODE SIL CARB 650V 8A TO220FM Rohm Semiconductor |
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- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.55 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 160 µA @ 600 V | 291pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
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SCS306AMCDIODE SIL CARB 650V 6A TO220FM Rohm Semiconductor |
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- | TO-220-2 Full Pack | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 6A | 1.5 V @ 6 A | No Recovery Time > 500mA (Io) | 0 ns | 30 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | TO-220FM | 175°C (Max) |
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SCS220AECDIODE SIL CARBIDE 650V 20A TO247 Rohm Semiconductor |
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- | TO-247-3 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | 175°C (Max) |
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SCS220AGHRCDIODE SIL CARB 650V 20A TO220AC Rohm Semiconductor |
0 |
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![]() Tabla de datos |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 20A | 1.55 V @ 20 A | No Recovery Time > 500mA (Io) | 0 ns | 400 µA @ 600 V | 730pF @ 1V, 1MHz | Automotive | AEC-Q101 | Through Hole | TO-220AC | 175°C (Max) |