Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Configuración | Característica FET | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Capacitancia de entrada (Ciss) (máx.) a Vds | Potencia: máx. | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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IPG20N04S4L08ATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
34,470 |
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OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 8.2mOhm @ 17A, 10V | 2.2V @ 22µA | 39nC @ 10V | 3050pF @ 25V | 54W | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-4 |
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IAUC60N04S6L045HATMA1MOSFET 2N-CH 40V 60A 8TDSON Infineon Technologies |
17,819 |
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OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | Logic Level Gate | 40V | 60A (Tj) | 4.5mOhm @ 30A, 10V | 2V @ 13µA | 19nC @ 10V | 1136pF @ 25V | 52W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-57 |
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IPG20N10S4L35ATMA1MOSFET 2N-CH 100V 20A 8TDSON Infineon Technologies |
35,255 |
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OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 100V | 20A | 35mOhm @ 17A, 10V | 2.1V @ 16µA | 17.4nC @ 10V | 1105pF @ 25V | 43W | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-4 |
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BSZ215CHXTMA1MOSFET N/P-CH 20V 5.1A 8TSDSON Infineon Technologies |
5,476 |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel Complementary | Logic Level Gate, 2.5V Drive | 20V | 5.1A, 3.2A | 55mOhm @ 5.1A, 4.5V | 1.4V @ 110µA | 2.8nC @ 4.5V | 419pF @ 10V | 2.5W | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TSDSON-8 |
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IRF7324TRPBFMOSFET 2P-CH 20V 9A 8SO Infineon Technologies |
8,949 |
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 9A | 18mOhm @ 9A, 4.5V | 1V @ 250µA | 63nC @ 5V | 2940pF @ 15V | 2W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IPG20N04S4L07ATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
2,651 |
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OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A | 7.2mOhm @ 17A, 10V | 2.2V @ 30µA | 50nC @ 10V | 3980pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-4 |
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BSC0921NDIATMA1MOSFET 2N-CH 30V 17A/31A TISON8 Infineon Technologies |
14,253 |
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OptiMOS™ | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) Asymmetrical | Logic Level Gate, 4.5V Drive | 30V | 17A, 31A | 5mOhm @ 20A, 10V | 2V @ 250µA | 8.9nC @ 4.5V | 1025pF @ 15V | 1W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TISON-8 |
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BSC072N04LDATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
637 |
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OptiMOS™ T2 | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 40V | 20A (Tc) | 7.2mOhm @ 17A, 10V | 2.2V @ 30µA | 52nC @ 10V | 3990pF @ 20V | 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8-4 |
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IPG20N06S4L11ATMA1MOSFET 2N-CH 60V 20A 8TDSON Infineon Technologies |
3,072 |
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OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 60V | 20A | 11.2mOhm @ 17A, 10V | 2.2V @ 28µA | 53nC @ 10V | 4020pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-4 |
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IRFI4212H-117PXKMA1MOSFET 2N-CH 100V 11A TO220-5 Infineon Technologies |
822 |
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- | TO-220-5 Full Pack, Formed Leads | Tube | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 100V | 11A (Tc) | 72.5mOhm @ 6.6A, 10V | 5V @ 250µA | 18nC @ 10V | 490pF @ 50V | 18W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220-5 Full-Pak |