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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    APTM50AM24SG

    APTM50AM24SG

    MOSFET 2N-CH 500V 150A SP6

    Microchip Technology

    16
    RFQ
    APTM50AM24SG

    Tabla de datos

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 500V 150A 28mOhm @ 75A, 10V 5V @ 6mA 434nC @ 10V 19600pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    APTM20AM04FG

    APTM20AM04FG

    MOSFET 2N-CH 200V 372A SP6

    Microchip Technology

    7
    RFQ
    APTM20AM04FG

    Tabla de datos

    - SP6 Bulk Active MOSFET (Metal Oxide) 2 N-Channel (Half Bridge) - 200V 372A 5mOhm @ 186A, 10V 5V @ 10mA 560nC @ 10V 28900pF @ 25V 1250W -40°C ~ 150°C (TJ) - - Chassis Mount SP6
    MSCSM170AM058CD3AG

    MSCSM170AM058CD3AG

    MOSFET 2N-CH 1700V 353A

    Microchip Technology

    8
    RFQ
    MSCSM170AM058CD3AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 353A (Tc) 7.5mOhm @ 180A, 20V 3.3V @ 15mA 1068nC @ 20V 19800pF @ 1000V 1.642kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM170HM23CT3AG

    MSCSM170HM23CT3AG

    MOSFET 4N-CH 1700V 124A

    Microchip Technology

    2
    RFQ
    MSCSM170HM23CT3AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Full Bridge) - 1700V (1.7kV) 124A (Tc) 22.5mOhm @ 60A, 20V 3.2V @ 5mA 356nC @ 20V 6600pF @ 1000V 602W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM170AM029CT6LIAG

    MSCSM170AM029CT6LIAG

    MOSFET 2N-CH 1700V 676A

    Microchip Technology

    8
    RFQ
    MSCSM170AM029CT6LIAG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 676A (Tc) 3.75mOhm @ 360A, 20V 3.3V @ 30mA 2136nC @ 20V 39600pF @ 1000V 3kW (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM70AM19T1AG

    MSCSM70AM19T1AG

    MOSFET 2N-CH 700V 124A

    Microchip Technology

    21
    RFQ
    MSCSM70AM19T1AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 700V 124A (Tc) 19mOhm @ 40A, 20V 2.4V @ 4mA 215nC @ 20V 4500pF @ 700V 365W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120AM31CT1AG

    MSCSM120AM31CT1AG

    MOSFET 2N-CH 1200V 89A SP1F

    Microchip Technology

    7
    RFQ
    MSCSM120AM31CT1AG

    Tabla de datos

    - Module Tube Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1200V (1.2kV) 89A (Tc) 31mOhm @ 40A, 20V 2.8V @ 1mA 232nC @ 20V 3020pF @ 1000V 395W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP1F
    MSCSM70TLM44C3AG

    MSCSM70TLM44C3AG

    MOSFET 4N-CH 700V 58A SP3F

    Microchip Technology

    7
    RFQ

    -

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 700V 58A (Tc) 44mOhm @ 30A, 20V 2.7V @ 2mA 99nC @ 20V 2010pF @ 700V 176W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
    MSCSM170AM45CT1AG

    MSCSM170AM45CT1AG

    MOSFET 2N-CH 1700V 64A

    Microchip Technology

    6
    RFQ
    MSCSM170AM45CT1AG

    Tabla de datos

    - Module Bulk Active Silicon Carbide (SiC) 2 N Channel (Phase Leg) - 1700V (1.7kV) 64A (Tc) 45mOhm @ 30A, 20V 3.2V @ 2.5mA 178nC @ 20V 3300pF @ 1000V 319W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount -
    MSCSM120TLM50C3AG

    MSCSM120TLM50C3AG

    MOSFET 4N-CH 1200V 55A SP3F

    Microchip Technology

    5
    RFQ

    -

    - Module Bulk Active Silicon Carbide (SiC) 4 N-Channel (Three Level Inverter) - 1200V (1.2kV) 55A (Tc) 50mOhm @ 40A, 20V 2.7V @ 1mA 137nC @ 20V 1990pF @ 1000V 245W (Tc) -40°C ~ 175°C (TJ) - - Chassis Mount SP3F
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