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    KATY Electronic Technology Co., LTD KATY Electronic Technology Co., LTD

    Matrices de FET, MOSFET

    制造商 Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete





























































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































































    全部重置
    应用所有
    结果:
    Foto N.º de Parte del Fabricante Disponibilidad Precio Cantidad Hoja de Datos Serie Paquete/Caja Embalaje Estado del producto Tecnología Configuración Característica FET Voltaje de drenaje a fuente (Vdss) Corriente: drenaje continuo (Id) a 25 °C Rds activado (máx.) a Id, Vgs Vgs(th) (máx.) a Id Carga de compuerta (Qg) (máx.) a Vgs Capacitancia de entrada (Ciss) (máx.) a Vds Potencia: máx. Temperatura de funcionamiento Grado Calificación Tipo de montaje Proveedor Dispositivo Paquete
    HT8KC5TB1

    HT8KC5TB1

    MOSFET 2N-CH 60V 3.5A 8HSMT

    Rohm Semiconductor

    2,928
    RFQ
    HT8KC5TB1

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 60V 3.5A (Ta), 10A (Tc) 90mOhm @ 3.5A, 10V 2.5V @ 1mA 3.1nC @ 10V 135pF @ 30V 2W (Ta), 13W (Tc) 150°C (TJ) - - Surface Mount 8-HSMT (3.2x3)
    SH8MC4TB1

    SH8MC4TB1

    MOSFET N/P-CH 60V 3.5A 8SOP

    Rohm Semiconductor

    2,500
    RFQ
    SH8MC4TB1

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 60V 3.5A (Ta), 4A (Ta) 95mOhm @ 3.5A, 10V, 96mOhm @ 4A, 10V 2.5V @ 1mA 3.1nC @ 10V, 17.3nC @ 10V 135pF @ 30V, 850pF @ 30V 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    QS8J1TR

    QS8J1TR

    MOSFET 2P-CH 12V 4.5A TSMT8

    Rohm Semiconductor

    6,000
    RFQ
    QS8J1TR

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) 2 P-Channel (Dual) Logic Level Gate 12V 4.5A 29mOhm @ 4.5A, 4.5V 1V @ 1mA 31nC @ 4.5V 2450pF @ 6V 1.5W 150°C (TJ) - - Surface Mount TSMT8
    SH8MB4TB1

    SH8MB4TB1

    MOSFET N/P-CH 40V 4.5A 8SOP

    Rohm Semiconductor

    2,490
    RFQ

    -

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 40V 4.5A (Ta), 5.5A (Ta) 55mOhm @ 4.5A, 10V, 46mOhm @ 5.5A, 10V 2.5V @ 1mA 3.5nC @ 10V, 17.2nC @ 10V 150pF @ 20V, 920pF @ 20V 2W (Ta) 150°C (TJ) - - Surface Mount 8-SOP
    QS8K13TCR

    QS8K13TCR

    MOSFET 2N-CH 30V 6A TSMT8

    Rohm Semiconductor

    2,980
    RFQ
    QS8K13TCR

    Tabla de datos

    - 8-SMD, Flat Leads Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel (Dual) - 30V 6A 28mOhm @ 6A, 10V 2.5V @ 1mA 20nC @ 10V 390pF @ 10V 550mW 150°C (TJ) - - Surface Mount TSMT8
    HP8ME5TB1

    HP8ME5TB1

    MOSFET N/P-CH 100V 3A 8HSOP

    Rohm Semiconductor

    1,142
    RFQ
    HP8ME5TB1

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 100V 3A (Ta), 8.5A (Tc), 3A (Ta), 8A (Tc) 193mOhm @ 3A, 10V, 273mOhm @ 3A, 10V 2.5V @ 1mA 2.9nC @ 10V, 19.7nC @ 10V 90pF @ 50V, 590pF @ 50V 3W (Ta), 20W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
    SH8M41GZETB

    SH8M41GZETB

    MOSFET N/P-CH 80V 3.4A/2.6A 8SOP

    Rohm Semiconductor

    2,477
    RFQ
    SH8M41GZETB

    Tabla de datos

    - 8-SOIC (0.154", 3.90mm Width) Tape & Reel (TR) Not For New Designs MOSFET (Metal Oxide) N and P-Channel Logic Level Gate, 4V Drive 80V 3.4A, 2.6A 130mOhm @ 3.4A, 10V 2.5V @ 1mA 9.2nC @ 5V 600pF @ 10V 2W 150°C (TJ) - - Surface Mount 8-SOP
    HP8MC5TB1

    HP8MC5TB1

    MOSFET N/P-CH 60V 4.5A 8HSOP

    Rohm Semiconductor

    2,500
    RFQ
    HP8MC5TB1

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 60V 4.5A (Ta), 12A (Tc), 5A (Ta), 12A (Tc) 90mOhm @ 4.5A, 10V, 96mOhm @ 5A, 10V 2.5V @ 1mA 3.1nC @ 10V, 17.3nC @ 10V 135pF @ 30V, 850pF @ 30V 3W (Ta), 20W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
    HP8MB5TB1

    HP8MB5TB1

    MOSFET N/P-CH 40V 6A 8HSOP

    Rohm Semiconductor

    2,475
    RFQ
    HP8MB5TB1

    Tabla de datos

    - 8-PowerTDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) N and P-Channel - 40V 6A (Ta), 16.5A (Tc), 7A (Ta), 18A (Tc) 46mOhm @ 6A, 10V, 44mOhm @ 7A, 10V 2.5V @ 1mA 3.5nC @ 10V, 17.2nC @ 10V 150pF @ 20V, 920pF @ 20V 3W (Ta), 20W (Tc) 150°C (TJ) - - Surface Mount 8-HSOP
    HT8KE6TB1

    HT8KE6TB1

    MOSFET 2N-CH 100V 4.5A 8HSMT

    Rohm Semiconductor

    2,980
    RFQ
    HT8KE6TB1

    Tabla de datos

    - 8-PowerVDFN Tape & Reel (TR) Active MOSFET (Metal Oxide) 2 N-Channel - 100V 4.5A (Ta), 13A (Tc) 57mOhm @ 4.5A, 10V 2.5V @ 1mA 6.7nC @ 10V 305pF @ 50V 2W (Ta), 14W (Tc) 150°C (TJ) - - Surface Mount 8-HSMT (3.2x3)
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