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FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G3R60MT07D750V 60M TO-247-3 G3R SIC MOSFET GeneSiC Semiconductor |
1,839 | - |
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Tabla de datos |
G3R™ | TO-247-3 | Tube | Active | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | +20V, -10V | - | - | - | - | - | - | Through Hole | TO-247-3 |
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G3R60MT07K750V 60M TO-247-4 G3R SIC MOSFET GeneSiC Semiconductor |
1,151 | - |
|
Tabla de datos |
G3R™ | TO-247-4 | Tube | Active | - | SiCFET (Silicon Carbide) | 750 V | - | - | - | - | - | +20V, -10V | - | - | - | - | - | - | Through Hole | TO-247-4 |
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G3R350MT12J-TR1200V 350M TO-263-7 G3R SIC MOSF GeneSiC Semiconductor |
623 | - |
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Tabla de datos |
G3R™, LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 10A (Tc) | 15V, 18V | 395mOhm @ 4A, 18V | 2.7V @ 2mA | 10 nC @ 15 V | +22V, -10V | 331 pF @ 800 V | - | 64W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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G2R1000MT17J-TR1700V 1000M TO-263-7 G2R SIC MOS GeneSiC Semiconductor |
606 | - |
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Tabla de datos |
G2R™, LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 5A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 4V @ 2mA | 11 nC @ 20 V | +20V, -5V | 139 pF @ 1000 V | - | 44W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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G3F135MT12J-TR1200V 135M TO-263-7 G3F SIC MOSF GeneSiC Semiconductor |
800 | - |
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- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 18A (Tc) | 18V | 180mOhm @ 8A, 18V | 4.3V @ 5mA | 27 nC @ 18 V | +22V, -10V | 575 pF @ 800 V | - | 87W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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G3F60MT06J-TR650V 55M TO-263-7 G3F SIC MOSFET GeneSiC Semiconductor |
800 | - |
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- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 44A (Tc) | 15V, 18V | 75mOhm @ 15A, 18V | 4.3V @ 7mA | 45 nC @ 18 V | +22V, -10V | 1322 pF @ 400 V | - | 155W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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G3F75MT12J-TR1200V 75M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor |
800 | - |
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- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 31A (Tc) | 18V | 100mOhm @ 12A, 18V | 4.3V @ 9mA | 48 nC @ 18 V | +22V, -10V | 988 pF @ 800 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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G3F75MT12K1200V 75M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor |
600 | - |
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- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 30A (Tc) | 18V | 100mOhm @ 12A, 18V | 4.3V @ 9mA | 48 nC @ 18 V | +22V, -10V | 988 pF @ 800 V | - | 127W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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G3F60MT06D650V 55M TO-247-3 G3F SIC MOSFET GeneSiC Semiconductor |
600 | - |
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- |
- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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G3F60MT06K650V 55M TO-247-4 G3F SIC MOSFET GeneSiC Semiconductor |
600 | - |
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- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 42A (Tc) | 15V, 18V | 75mOhm @ 15A, 18V | 4.3V @ 7mA | 45 nC @ 18 V | +22V, -10V | 1322 pF @ 400 V | - | 140W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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