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FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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G3F45MT06J-TR650V 40M TO-263-7 G3F SIC MOSFET GeneSiC Semiconductor |
800 | - |
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- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 56A (Tc) | 15V, 18V | 54mOhm @ 20A, 18V | 4.3V @ 8mA | 55 nC @ 18 V | +22V, -10V | 1640 pF @ 400 V | - | 187W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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G3F65MT12J-TR1200V 65M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor |
800 | - |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 37A (Tc) | 18V | 86mOhm @ 15A, 18V | 4.3V @ 10mA | 55 nC @ 18 V | +22V, -10V | 1298 pF @ 800 V | - | 171W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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G3F65MT12K1200V 65M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor |
600 | - |
|
- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 35A (Tc) | 18V | 86mOhm @ 15A, 18V | 4.3V @ 10mA | 55 nC @ 18 V | +22V, -10V | 1298 pF @ 800 V | - | 153W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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G3F45MT06D650V 40M TO-247-3 G3F SIC MOSFET GeneSiC Semiconductor |
600 | - |
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- |
- | TO-247-3 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | - | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-3 |
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G3F33MT06J-TR650V 27M TO-263-7 G3F SIC MOSFET GeneSiC Semiconductor |
800 | - |
|
- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 80A (Tc) | 15V, 18V | 38mOhm @ 26A, 18V | 4.3V @ 12mA | 81 nC @ 18 V | +22V, -10V | 2394 pF @ 400 V | - | 261W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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G3F45MT06K650V 40M TO-247-4 G3F SIC MOSFET GeneSiC Semiconductor |
600 | - |
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- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 52A (Tc) | 15V, 18V | 54mOhm @ 20A, 18V | 4.3V @ 8mA | 55 nC @ 18 V | +22V, -10V | 1640 pF @ 400 V | - | 167W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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G3F40MT12J-TR1200V 40M TO-263-7 G3F SIC MOSFE GeneSiC Semiconductor |
800 | - |
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- |
- | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 59A (Tc) | 18V | 53mOhm @ 20A, 18V | 4.3V @ 16mA | 86 nC @ 18 V | +22V, -10V | 2023 pF @ 800 V | - | 270W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | TO-263-7 |
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G3F40MT12K1200V 40M TO-247-4 G3F SIC MOSFE GeneSiC Semiconductor |
552 | - |
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- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 1200 V | 55A (Tc) | 18V | 53mOhm @ 20A, 18V | 4.3V @ 16mA | 86 nC @ 18 V | +22V, -10V | 2023 pF @ 800 V | - | 234W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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G3F33MT06K650V 27M TO-247-4 G3F SIC MOSFET GeneSiC Semiconductor |
600 | - |
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- |
- | TO-247-4 | Tube | Active | N-Channel | SiC (Silicon Carbide Junction Transistor) | 650 V | 74A (Tc) | 15V, 18V | 38mOhm @ 26A, 18V | 4.3V @ 12mA | 81 nC @ 18 V | +22V, -10V | 2394 pF @ 400 V | - | 227W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | TO-247-4 |
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G3R40MT12J-TR1200V 40M TO-263-7 G3R SIC MOSFE GeneSiC Semiconductor |
630 | - |
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Tabla de datos |
G3R™, LoRing™ | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA | Tape & Reel (TR) | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 66A (Tc) | 15V, 18V | 45mOhm @ 35A, 18V | 2.7V @ 18mA | 88 nC @ 15 V | +22V, -10V | 2897 pF @ 800 V | - | 330W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | TO-263-7 |
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