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FET, MOSFET
| Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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IRF40B207MOSFET N-CH 40V 95A TO220AB Infineon Technologies |
1,841 |
|
Tabla de datos |
HEXFET®, StrongIRFET™ | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 95A (Tc) | 6V, 10V | 4.5mOhm @ 57A, 10V | 3.9V @ 50µA | 68 nC @ 10 V | ±20V | 2110 pF @ 25 V | - | 83W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
|
IPD50P03P4L11ATMA2MOSFET P-CH 30V 50A TO252-31 Infineon Technologies |
19,021 |
|
Tabla de datos |
OptiMOS™ P2 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | - | 10.5mOhm @ 50A, 10V | 2V @ 85µA | 55 nC @ 10 V | +5V, -16V | 3770 pF @ 25 V | - | 58W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
|
IPA65R1K0CEXKSA1MOSFET N-CH 650V 7.2A TO220 Infineon Technologies |
1,456 |
|
Tabla de datos |
CoolMOS™ | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7.2A (Tc) | 10V | 1Ohm @ 1.5A, 10V | 3.5V @ 200µA | 15.3 nC @ 10 V | ±20V | 328 pF @ 100 V | - | 68W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | PG-TO220-FP |
|
|
IPD040N03LGATMA1MOSFET N-CH 30V 90A TO252-3 Infineon Technologies |
186 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 90A (Tc) | 4.5V, 10V | 4mOhm @ 30A, 10V | 2.2V @ 250µA | 38 nC @ 10 V | ±20V | 3900 pF @ 15 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
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IPD050N03LGATMA1MOSFET N-CH 30V 50A TO252-3 Infineon Technologies |
3,430 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Not For New Designs | N-Channel | MOSFET (Metal Oxide) | 30 V | 50A (Tc) | 4.5V, 10V | 5mOhm @ 30A, 10V | 2.2V @ 250µA | 31 nC @ 10 V | ±20V | 3200 pF @ 15 V | - | 68W (Tc) | -55°C ~ 155°C (TJ) | - | - | Surface Mount | PG-TO252-3-11 |
|
|
IPD50N06S409ATMA2MOSFET N-CH 60V 50A TO252-31 Infineon Technologies |
250 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 60 V | 50A (Tc) | 10V | 9mOhm @ 50A, 10V | 4V @ 34µA | 47.1 nC @ 10 V | ±20V | 3785 pF @ 25 V | - | 71W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-11 |
|
ISZ56DP15LMATMA1TRENCH >=100V Infineon Technologies |
9,850 |
|
Tabla de datos |
- | 8-PowerTDFN | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 150 V | 1.35A (Ta), 6.7A (Tc) | 4.5V, 10V | 560mOhm @ 5A, 10V | 2V @ 724µA | 40 nC @ 10 V | ±20V | 1400 pF @ 75 V | - | 2.5W (Ta), 62.5W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TSDSON-8 FL |
|
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IPD135N08N3GATMA1MOSFET N-CH 80V 45A TO252-3 Infineon Technologies |
11,914 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 45A (Tc) | 6V, 10V | 13.5mOhm @ 45A, 10V | 3.5V @ 33µA | 25 nC @ 10 V | ±20V | 1730 pF @ 40 V | - | 79W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TO252-3 |
|
|
IPD50N08S413ATMA1MOSFET N-CH 80V 50A TO252-3 Infineon Technologies |
4,138 |
|
Tabla de datos |
OptiMOS™ | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 80 V | 50A (Tc) | 10V | 13.2mOhm @ 50A, 10V | 4V @ 33µA | 30 nC @ 10 V | ±20V | 1711 pF @ 25 V | - | 72W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TO252-3-313 |
|
IRFH8311TRPBFMOSFET N CH 30V 32A PQFN5X6 Infineon Technologies |
42,714 |
|
Tabla de datos |
HEXFET® | 8-TQFN Exposed Pad | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 32A (Ta), 169A (Tc) | 4.5V, 10V | 2.1mOhm @ 20A, 10V | 2.35V @ 100µA | 66 nC @ 10 V | ±20V | 4960 pF @ 10 V | - | 3.6W (Ta), 96W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
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