Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Configuración | Característica FET | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Capacitancia de entrada (Ciss) (máx.) a Vds | Potencia: máx. | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ISA250300C04LMDSXTMA1ISA250300C04LMDSXTMA1 Infineon Technologies |
500 |
|
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OptiMOS™ 3 | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | - | 40V | 5.9A (Ta), 7.9A (Tc), 5.8A (Ta), 7.8A (Tc) | 25mOhm @ 7.9A, 10V, 30mOhm @ 7.8A, 10V | 2.7V @ 1mA | 11.9nC @ 10V | 1600pF @ 20V | 1.4W (Ta), 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8-920 |
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ISA250250N04LMDSXTMA1ISA250250N04LMDSXTMA1 Infineon Technologies |
498 |
|
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OptiMOS™ 3 | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | Logic Level Gate | 40V | 5.9A (Ta), 7.9A (Tc) | 25mOhm @ 7.9A, 10V | 2.7V @ 1mA | 11.9nC @ 10V | 720pF @ 20V | 1.4W (Ta), 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8-920 |
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IAUCN10S5L280DATMA1MOSFET 2N-CH 100V 23A 8TDSON Infineon Technologies |
4,990 |
|
- |
OptiMOS™ 5 | 8-PowerTDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 100V | 23A (Tj) | 28mOhm @ 10A, 10V | 2.2V @ 10µA | 10nC @ 10V | 690pF @ 10V | 38W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-TDSON-8-61 |
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IPG20N04S4L18AATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
4,690 |
|
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OptiMOS™ T2 | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 40V | 20A (Tc) | 18mOhm @ 17A, 10V | 2.2V @ 8µA | 15nC @ 10V | 1071pF @ 25V | 26W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | PG-TDSON-8-10 |
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IRF7303TRPBFXTMA1MOSFET 2N-CH 30V 4.9A 8DSO-902 Infineon Technologies |
10,710 |
|
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | - | 30V | 4.9A (Ta) | 50mOhm @ 2.4A, 10V | 1V @ 250µA | 25nC @ 10V | 520pF @ 25V | 2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8-902 |
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IPG16N10S461AATMA1MOSFET 2N-CH 100V 16A 8TDSON Infineon Technologies |
8,755 |
|
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OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 100V | 16A | 61mOhm @ 16A, 10V | 3.5V @ 9µA | 7nC @ 10V | 490pF @ 25V | 29W | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | PG-TDSON-8-10 |
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ISA170230C04LMDSXTMA1ISA170230C04LMDSXTMA1 Infineon Technologies |
500 |
|
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OptiMOS™ 3 | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | N and P-Channel | - | 40V | 7.2A (Ta), 9.6A (Tc), 6.6A (Ta), 8.8A (Tc) | 17mOhm @ 9.6A, 10V, 23mOhm @ 8.8A, 10V | 2.7V @ 1mA | 19.5nC @ 10V, 19nC @ 10V | 1100pF @ 20V, 2500pF @ 20V | 1.4W (Ta), 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8-920 |
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ISA170170N04LMDSXTMA1ISA170170N04LMDSXTMA1 Infineon Technologies |
500 |
|
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OptiMOS™ 3 | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel | Logic Level Gate | 40V | 7.2A (Ta), 9.6A (Tc) | 17mOhm @ 9.6A, 10V | 2.7V @ 1mA | 19.5nC @ 10V | 1100pF @ 20V | 1.4W (Ta), 2.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8-920 |
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IPG20N06S2L50ATMA1MOSFET 2N-CH 55V 20A 8TDSON Infineon Technologies |
9,954 |
|
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OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 55V | 20A | 50mOhm @ 15A, 10V | 2V @ 19µA | 17nC @ 10V | 560pF @ 25V | 51W | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-TDSON-8-4 |
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IPG20N06S2L50AATMA1MOSFET 2N-CH 55V 20A 8TDSON Infineon Technologies |
5,000 |
|
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OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 55V | 20A | 50mOhm @ 15A, 10V | 2V @ 19µA | 17nC @ 10V | 560pF @ 25V | 51W | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | PG-TDSON-8-10 |