Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Configuración | Característica FET | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Capacitancia de entrada (Ciss) (máx.) a Vds | Potencia: máx. | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ISG0613N04NM6HATMA1MOSFET 2N-CH 40V 42A 10VITFN Infineon Technologies |
3,000 |
|
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OptiMOS™ 6 | 10-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 40V | 42A (Ta), 299A (Tc) | 0.88mOhm @ 50A, 10V | 2.8V @ 780µA | 104nC @ 10V | 6200pF @ 20V | 3W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-VITFN-10-1 |
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ISG0614N06NM5HATMA1MOSFET 2N-CH 60V 31A 10VITFN Infineon Technologies |
2,976 |
|
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OptiMOS™ 5 | 10-PowerVDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 60V | 31A (Ta), 233A (Tc) | 1.6mOhm @ 50A, 10V | 3.3V @ 86µA | 102nC @ 10V | 6400pF @ 30V | 3W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-VITFN-10-1 |
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ISG0613N04NM6HSCATMA1MOSFET 2N-CH 40V 42A 10WHITFN Infineon Technologies |
2,990 |
|
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OptiMOS™ 6 | 10-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 40V | 42A (Ta), 299A (Tc) | 0.88mOhm @ 50A, 10V | 2.8V @ 780µA | 104nC @ 10V | 6200pF @ 20V | 3W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHITFN-10-1 |
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ISG0614N06NM5HSCATMA1MOSFET 2N-CH 60V 31A 10WHITFN Infineon Technologies |
2,990 |
|
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OptiMOS™ 5 | 10-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 60V | 31A (Ta), 233A (Tc) | 1.6mOhm @ 50A, 10V | 3.3V @ 86µA | 102nC @ 10V | 6400pF @ 30V | 3W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHITFN-10-1 |
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IAUTN08S5N012LATMA1MOSFET 2N-CH 80V 300A PG-HSOF Infineon Technologies |
1,956 |
|
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OptiMOS™ 5 | 8-PowerSFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel, Common Drain, Common Source | - | 80V | 300A (Tj) | 1.15mOhm @ 100A, 10V | 3.3V @ 275µA | 24nC @ 10V | 15340pF @ 40V | 375W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HSOF-8-2 |
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F435MR07W1D7S8B11ABPSA1MOSFET 4N-CH 650V 35A MODULE Infineon Technologies |
42 |
|
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EasyPACK™ 1B | Module | Tray | Active | MOSFET (Metal Oxide) | 4 N-Channel (Full Bridge) | - | 650V | 35A | 39.4mOhm @ 35A, 10V | 4.45V @ 1.74mA | 141nC @ 10V | 6950pF @ 400V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
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FF33MR12W1M1HPB11BPSA1MOSFET Infineon Technologies |
30 |
|
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- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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DF11MR12W1M1HFB67BPSA1MOSFET 1200V AG-EASY1B Infineon Technologies |
38 |
|
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CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | - | - | Chassis Mount | AG-EASY1B |
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BSO211PHXUMA1MOSFET 2P-CH 20V 4A 8DSO Infineon Technologies |
0 |
|
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OptiMOS™ | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate | 20V | 4A | 67mOhm @ 4.6A, 4.5V | 1.2V @ 25µA | 10nC @ 4.5V | 1095pF @ 15V | 1.6W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-8 |
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IRF7316GTRPBFMOSFET 2P-CH 30V 4.9A 8SO Infineon Technologies |
2,290 |
|
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HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate | 30V | 4.9A | 58mOhm @ 4.9A, 10V | 1V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |