Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Configuración | Característica FET | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Capacitancia de entrada (Ciss) (máx.) a Vds | Potencia: máx. | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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FF11MR12W1M1PB11BPSA1MOSFET 2N-CH 1200V AG-EASY1B Infineon Technologies |
53 |
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EasyDUAL™ | Module | Tray | Obsolete | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1200V (1.2kV) | 100A (Tj) | 11.3mOhm @ 100A, 15V | 5.55V @ 40mA | 248nC @ 15V | 7360pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | AG-EASY1B-2 |
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FF6MR12KM1BOSA1MOSFET 2N-CH 1200V 250A AG-62MM Infineon Technologies |
0 |
|
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CoolSiC™ | Module | Bulk | Obsolete | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 250A (Tc) | 5.81mOhm @ 250A, 15V | 5.15V @ 80mA | 496nC @ 15V | 14700pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | AG-62MM |
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BSO4804HUMA2MOSFET 2N-CH 30V 8A 8DSO Infineon Technologies |
0 |
|
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- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | Logic Level Gate | 30V | 8A (Ta) | 20mOhm @ 8A, 10V | 2V @ 30µA | 17nC @ 5V | 870pF @ 25V | 2W | -55°C ~ 150°C | - | - | Surface Mount | PG-DSO-8 |
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IRF6802SDTRPBFIRF6802 - 12V-300V N-CHANNEL POW Infineon Technologies |
4,800 |
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FD1400R12IP4DBOSA1MOSFET Infineon Technologies |
76 |
|
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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FF08MR12W1MA1B11ABPSA1MOSFET 2N-CH 1200V AG-EASY1BM-2 Infineon Technologies |
8 |
|
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CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1200V (1.2kV) | 150A (Tj) | 9.8mOhm @ 150A, 15V | 5.55V @ 90mA | 450nC @ 15V | 16000pF @ 600V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | AG-EASY1BM-2 |
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FF2MR12KM1HPHPSA1MOSFET 2N-CH 1200V AG-62MMHB Infineon Technologies |
8 |
|
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CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 500A (Tc) | 2.13mOhm @ 500A, 15V | 5.15V @ 224mA | 1340nC @ 15V | 39700pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | AG-62MMHB |
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FF4MR20KM1HHPSA1MOSFET 2N-CH 2000V AG-62MMHB Infineon Technologies |
11 |
|
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C | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel | - | 2000V (2kV) | 280A (Tc) | 5.3mOhm @ 300A, 18V | 5.15V @ 168mA | 1170nC @ 18V | 36100pF @ 1.2kV | - | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | AG-62MMHB |
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FS05MR12A6MA1BBPSA1MOSFET 1200V 200A AG-HYBRIDD Infineon Technologies |
9 |
|
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HybridPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | - | - | 1200V (1.2kV) | 200A | - | - | - | - | - | - | - | - | Chassis Mount | AG-HYBRIDD-2 |
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FS03MR12A6MA1BBPSA1MOSFET 6N-CH 1200V AG-HYBRIDD Infineon Technologies |
7 |
|
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HybridPACK™ | Module | Tray | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 1200V (1.2kV) | 400A (Tj) | 3.7mOhm @ 400A, 15V | 5.55V @ 240mA | 1320nC @ 15V | 42500pF @ 600V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | AG-HYBRIDD-2 |