Foto | N.º de Parte del Fabricante | Disponibilidad | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tecnología | Configuración | Característica FET | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Capacitancia de entrada (Ciss) (máx.) a Vds | Potencia: máx. | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
IPG20N06S415AATMA1MOSFET 2N-CH 60V 20A 8TDSON Infineon Technologies |
2 |
|
![]() Tabla de datos |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 60V | 20A | 15.5mOhm @ 17A, 10V | 4V @ 20µA | 29nC @ 10V | 2260pF @ 25V | 50W | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | PG-TDSON-8-10 |
![]() |
IPG20N04S408BATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
4,668 |
|
![]() Tabla de datos |
OptiMOS™ T2 | 8-PowerVDFN | Tape & Reel (TR) | Last Time Buy | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 40V | 20A (Tc) | 7.6mOhm @ 17A, 10V | 4V @ 30µA | 36nC @ 10V | 2940pF @ 25V | 65W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | PG-TDSON-8-10 |
![]() |
IPG20N04S408AATMA1MOSFET 2N-CH 40V 20A 8TDSON Infineon Technologies |
4,071 |
|
![]() Tabla de datos |
OptiMOS™ | 8-PowerVDFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 40V | 20A | 7.6mOhm @ 17A, 10V | 4V @ 30µA | 36nC @ 10V | 2940pF @ 25V | 65W | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount, Wettable Flank | PG-TDSON-8-10 |
![]() |
AUIRFN8459TRMOSFET 2N-CH 40V 50A PQFN Infineon Technologies |
10,414 |
|
![]() Tabla de datos |
HEXFET® | 8-PowerTDFN | Tape & Reel (TR) | Last Time Buy | MOSFET (Metal Oxide) | 2 N-Channel (Dual) | - | 40V | 50A | 5.9mOhm @ 40A, 10V | 3.9V @ 50µA | 60nC @ 10V | 2250pF @ 25V | 50W | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PQFN (5x6) |
![]() |
IRF3546MTRPBFMOSFET 4N-CH 25V 16A 41QFN Infineon Technologies |
0 |
|
![]() Tabla de datos |
- | 41-PowerVFQFN | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 4 N-Channel | Logic Level Gate | 25V | 16A (Tc), 20A (Tc) | 3.9mOhm @ 27A, 10V | 2.1V @ 35µA | 15nC @ 4.5V | 1310pF @ 13V | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 41-PQFN (6x8) |
![]() |
AUIRF7316QTRMOSFET 2P-CH 30V 8SOIC Infineon Technologies |
298 |
|
![]() Tabla de datos |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | MOSFET (Metal Oxide) | 2 P-Channel (Dual) | Logic Level Gate | 30V | - | 58mOhm @ 4.9A, 10V | 3V @ 250µA | 34nC @ 10V | 710pF @ 25V | 2W | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOIC |
|
FF45MR12W1M1B11BOMA1MOSFET 2N-CH 1200V AG-EASY1BM-2 Infineon Technologies |
0 |
|
![]() Tabla de datos |
CoolSiC™+ | Module | Bulk | Obsolete | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1200V (1.2kV) | 25A (Tj) | 45mOhm @ 25A, 15V (Typ) | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | AG-EASY1BM-2 |
![]() |
DF23MR12W1M1PB11BPSA1MOSFET 2N-CH 1200V 25A AG-EASY1B Infineon Technologies |
24 |
|
![]() Tabla de datos |
EasyPACK™ | Module | Bulk | Obsolete | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1200V (1.2kV) | 25A (Tj) | 45mOhm @ 25A, 15V | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | AG-EASY1B-2 |
|
FF23MR12W1M1B11BOMA1MOSFET 2N-CH 1200V 50A MODULE Infineon Technologies |
246 |
|
![]() Tabla de datos |
CoolSiC™+ | Module | Tray | Obsolete | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1200V (1.2kV) | 50A | 23mOhm @ 50A, 15V | 5.55V @ 20mA | 125nC @ 15V | 3950pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
|
FS45MR12W1M1B11BOMA1MOSFET 6N-CH 1200V AG-EASY1BM-2 Infineon Technologies |
101 |
|
![]() Tabla de datos |
CoolSiC™+ | Module | Tray | Obsolete | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 1200V (1.2kV) | 25A (Tj) | 45mOhm @ 25A, 15V (Typ) | 5.55V @ 10mA | 62nC @ 15V | 1840pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | AG-EASY1BM-2 |