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FET, MOSFET
| 制造商 | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
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全部重置
应用所有
结果:
| Foto | N.º de Parte del Fabricante | Disponibilidad | Precio | Cantidad | Hoja de Datos | Serie | Paquete/Caja | Embalaje | Estado del producto | Tipo FET | Tecnología | Voltaje de drenaje a fuente (Vdss) | Corriente: drenaje continuo (Id) a 25 °C | Voltaje de excitación (máx. Rds activado, mín. Rds activado) | Rds activado (máx.) a Id, Vgs | Vgs(th) (máx.) a Id | Carga de compuerta (Qg) (máx.) a Vgs | Vgs (máx.) | Capacitancia de entrada (Ciss) (máx.) a Vds | Característica FET | Disipación de potencia (máx.) | Temperatura de funcionamiento | Grado | Calificación | Tipo de montaje | Proveedor Dispositivo Paquete |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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BSS139IXTMA1MOSFET N-CH 250V 100MA SOT23-3 Infineon Technologies |
0 | - |
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Tabla de datos |
- | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel, Depletion Mode | MOSFET (Metal Oxide) | 250 V | 100mA (Ta) | 0V, 10V | 14Ohm @ 100mA, 10V | 1V @ 56µA | 2.3 nC @ 5 V | ±20V | 60 pF @ 25 V | - | 360mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23-3-5 |
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BSS123IXTMA1100V N-CH SMALL SIGNAL MOSFET IN Infineon Technologies |
0 | - |
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Tabla de datos |
OptiMOS™ | TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 100 V | 190mA (Ta) | 4.5V, 10V | 6Ohm @ 190mA, 10V | 1.8V @ 13µA | 0.63 nC @ 10 V | ±20V | 15 pF @ 50 V | - | 500mW (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23-3-5 |
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IPP014N06NF2SAKMA1TRENCH 40<-<100V Infineon Technologies |
0 | - |
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- |
StrongIRFET™2 | TO-220-3 | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 60 V | 39A (Ta), 198A (Tc) | 6V, 10V | 1.4mOhm @ 100A, 10V | 3.3V @ 246µA | 305 nC @ 10 V | ±20V | 13800 pF @ 30 V | - | 3.8W (Ta), 300W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | PG-TO220-3-U05 |
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IRLML6401TRPBF-1MOSFET Infineon Technologies |
0 | - |
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- |
HEXFET® | TO-236-3, SC-59, SOT-23-3 | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 4.3A (Ta) | 1.8V, 4.5V | 50mOhm @ 4.3A, 4.5V | 950mV @ 250µA | 15 nC @ 5 V | ±8V | 830 pF @ 10 V | - | 1.3W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-SOT23-3-901 |
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IPP881NE7NGXKSA1MOSFET Infineon Technologies |
0 | - |
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- | - | Bulk | Obsolete | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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IRF7420TRPBF-1MOSFET Infineon Technologies |
0 | - |
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- |
HEXFET® | 8-SOIC (0.154", 3.90mm Width) | Bulk | Obsolete | P-Channel | MOSFET (Metal Oxide) | 12 V | 11.5A (Ta) | 1.8V, 4.5V | 14mOhm @ 11.5A, 4.5V | 900mV @ 250µA | 38 nC @ 4.5 V | ±8V | 3529 pF @ 10 V | - | 2.5W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SO |
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IAUT300N08S5N012ATMA1MOSFET_(75V 120V( Infineon Technologies |
0 | - |
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- |
OptiMOS™ 5 | 8-PowerSFN | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | MOSFET (Metal Oxide) | 80 V | 300A (Tc) | 6V, 10V | 1.2mOhm @ 100A, 10V | 3.8V @ 275µA | 231 nC @ 10 V | ±20V | 16250 pF @ 40 V | - | 375W (Tc) | -55°C ~ 175°C (TJ) | Automotive | - | Surface Mount | PG-HSOF-8-1 |
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IGLR60R260D1E8238XUMA1GAN HV Infineon Technologies |
0 | - |
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- |
CoolGaN™ | 8-PowerTDFN | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | GaNFET (Gallium Nitride) | 600 V | 10.4A (Tc) | - | - | 1.6V @ 690µA | - | -10V | 110 pF @ 400 V | - | 52W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSON-8-7 |
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IGLR60R190D1E8238XUMA1GAN HV Infineon Technologies |
0 | - |
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- |
CoolGaN™ | 8-PowerTDFN | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | GaNFET (Gallium Nitride) | 600 V | 12.8A (Tc) | - | - | 1.6V @ 960µA | - | -10V | 157 pF @ 400 V | - | 55.5W (Tc) | -40°C ~ 150°C (TJ) | - | - | Surface Mount | PG-TSON-8-6 |
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IGOT60R070D1E8237AUMA1GAN HV Infineon Technologies |
0 | - |
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- |
CoolGaN™ | 20-PowerSOIC (0.433", 11.00mm Width) | Tape & Reel (TR) | Discontinued at Digi-Key | N-Channel | GaNFET (Gallium Nitride) | 600 V | 31A (Tc) | - | - | 1.6V @ 2.6mA | - | -10V | 380 pF @ 400 V | - | 125W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | PG-DSO-20-87 |
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